Oral presentation

Joint Session K » 21.1 Joint Session K

[16a-1B-1~12] 21.1 Joint Session K

Wed. Sep 16, 2015 9:00 AM - 12:15 PM 1B (133+134)

座長:川原村敏幸(高知工科大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[16a-1B-1] Change of surface properties of Ga-doped ZnO thin films by thermal annealing

〇Hisao Makino^1,2, Lukman Nulhakim², Nomoto Jun-ichi¹, Yamamoto Tetsuya¹ (1.Res. Inst. of KUT, 2.Kochi Univ. of Tech.)

9:15 AM - 9:30 AM

[16a-1B-2] Carrier transport of polycrystalline Ga-doped ZnO films prepared by reactive plasma deposition with dc arc discharge: oxygen gas flow rate and discharge current

〇Junichi Nomoto¹, Hisao Makino^1,2, Hisashi Kitami³, Toshiyuki Sakemi³, Tetsuya Yamamoto¹ (1.Research Inst., Kochi Univ. Tech., 2.Kochi Univ. Tech., 3.Sumitomo Heavy Ind, Ltd.)

9:30 AM - 9:45 AM

△ [16a-1B-3] Incident energy and ionization rates of flying particles during the growth of Ga-doped ZnO films by the reactive plasma deposition with dc arc discharge

〇Hisashi Kitami¹, Toshiyuki Sakemi¹, Junichi Nomoto², Hisao Makino^2,3, Yasushi Aoki¹, Takanori Kato¹, Tetsuya Yamamoto² (1.SHI, 2.Research Inst., Kochi Univ. Tech., 3.Kochi Univ. Tech.)

9:45 AM - 10:00 AM

[16a-1B-4] Influence of grain boundary on carrier transport in polycrystalline transparent conducting Al-doped ZnO thin films (2)

〇ryousuke uozaki¹, Toshihiro Miyata¹, Tadastugu Minami¹ (1.OEDS R&D Center, K I T)

10:00 AM - 10:15 AM

[16a-1B-5] Improving of Electrical Performance of SiO₂/ZnO Layered film by Thermal Annealing

〇Yasuji Yamada¹, Shuhei Funaki¹, Sota Inoue¹, Hiroki Kikuchi¹ (1.Shimane Univ.)

10:15 AM - 10:30 AM

△ [16a-1B-6] Physical property control of zinc oxide thin film by hydrogen ion beam irradiation at low temperature

〇Ryo Nakayama¹, Mitsuhiko Maesato¹, Takashi Nagaoka², Makoto Arita², HIroshi Kitagawa^1,3 (1.Kyoto Univ., 2.Kyushu Univ., 3.JST-CREST)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[16a-1B-7] Transparent conductive properties of ZnO films on sapphire C-plane substrates

〇Housei Akazawa¹ (1.NTT DIC)

11:00 AM - 11:15 AM

△ [16a-1B-8] Orientation dependence of conductivity in anatase Ti_1-xNb_xO₂ thin films.

〇(M2)yuuki yamaguchi¹, Shouichirou Nakao^2,3, Ryuuichirou Ino¹, Masunori Kawamura¹, Tetsuya Hasegawa^2,3, Naoomi Yamada¹ (1.Chubu Univ., 2.KAST, 3.Tokyo Univ.)

11:15 AM - 11:30 AM

△ [16a-1B-9] Preparation and evaluation of transparent p-type semiconducting γ-CuI thin films.

〇(M1)ryuichiro ino¹, Kohei Maruya¹, Yuuki Yamaguchi¹, Masunori Kawamura¹, Yoshihiko Ninomiya¹, Naoomi Yamada¹ (1.Chubu Univ.)

11:30 AM - 11:45 AM

[16a-1B-10] Dye-sensitized solar cell with ZrO₂ nano-particle light scattering layer

Rieko Ono¹, Takeshi Endo¹, Rena Otsuka¹, 〇Masayuki Okuya^1,2 (1.Grad. School Eng., Shizuoka Univ., 2.Res. Inst. Green Sci. Tech., Shizuoka Univ.)

11:45 AM - 12:00 PM

[16a-1B-11] Reduction of the interface resistance in dye-sensitized solar cell with TNO transparent conductive film

Takeshi Endo¹, Rieko Ono¹, 〇Masayuki Okuya^1,2, Ryo Iwaki¹, Shuichiro Takemura¹, Shoichiro Nakao³, Sohei Okazaki³, Enju Sakai³, Naoomi Yamada³, Taro Hitosugi⁴, Tetsuya Hasegawa⁵ (1.Grad. School Eng., Shizuoka Univ., 2.Res. Inst. Green Sch. Tech., Shizuoka Univ., 3.KAST, 4.Tohoku Univ., 5.Univ. Tokyo)

12:00 PM - 12:15 PM

[16a-1B-12] Plasmonic technology in wide-gap oxide semiconductors:
Fabricartions of reflection-type thermal-shielding sheets with visible/electromagnetic transmissions

〇Hiroaki Matsui¹, Shinya Furuta², Takayuki Hasebe³, Noriyuki Hasuike⁴, Hitoshi Tabata¹ (1.The Univ. of Tokyo, 2.Tomoe Works, 3.Custum Central Lab., 4.Kyoto Inst. of Tech.)

Session information

[16a-1B-1~12] 21.1 Joint Session K

[16a-1B-1] Change of surface properties of Ga-doped ZnO thin films by thermal annealing

[16a-1B-2] Carrier transport of polycrystalline Ga-doped ZnO films prepared by reactive plasma deposition with dc arc discharge: oxygen gas flow rate and discharge current

△ [16a-1B-3] Incident energy and ionization rates of flying particles during the growth of Ga-doped ZnO films by the reactive plasma deposition with dc arc discharge

[16a-1B-4] Influence of grain boundary on carrier transport in polycrystalline transparent conducting Al-doped ZnO thin films (2)

[16a-1B-5] Improving of Electrical Performance of SiO₂/ZnO Layered film by Thermal Annealing

△ [16a-1B-6] Physical property control of zinc oxide thin film by hydrogen ion beam irradiation at low temperature

[16a-1B-7] Transparent conductive properties of ZnO films on sapphire C-plane substrates

△ [16a-1B-8] Orientation dependence of conductivity in anatase Ti_1-xNb_xO₂ thin films.

△ [16a-1B-9] Preparation and evaluation of transparent p-type semiconducting γ-CuI thin films.

[16a-1B-10] Dye-sensitized solar cell with ZrO₂ nano-particle light scattering layer

[16a-1B-11] Reduction of the interface resistance in dye-sensitized solar cell with TNO transparent conductive film

[16a-1B-12] Plasmonic technology in wide-gap oxide semiconductors:
Fabricartions of reflection-type thermal-shielding sheets with visible/electromagnetic transmissions

Authentication

Session information

[16a-1B-1~12] 21.1 Joint Session K

△ [16a-1B-3] Incident energy and ionization rates of flying particles during the growth of Ga-doped ZnO films by the reactive plasma deposition with dc arc discharge

△ [16a-1B-6] Physical property control of zinc oxide thin film by hydrogen ion beam irradiation at low temperature

△ [16a-1B-8] Orientation dependence of conductivity in anatase Ti1-xNbxO2 thin films.

△ [16a-1B-9] Preparation and evaluation of transparent p-type semiconducting γ-CuI thin films.

Authentication

△ [16a-1B-8] Orientation dependence of conductivity in anatase Ti_1-xNb_xO₂ thin films.