Impurity Doping in Silicon Films by Phosphine Plasma Treatment and Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /MEMS/Integration technology

Sun. Sep 13, 2015 9:00 AM - 11:45 AM 1C (135)

座長:河本直哉(山口大),松尾直人(兵庫県立大)

10:15 AM - 10:30 AM

〇(M1)Ryota Shin¹, Seiji Morisaki¹, Seiichiro Higashi¹ (1.Hiroshima univ.)

Keywords:impurity doping