[13a-1C-1~10] 13.4 Si wafer processing /MEMS/Integration technology

[13a-1C-7] Analysis of Chemical Bonding State in Silicon/PET Interface by FTIR-ATR
Formed by Low-Temperature Transfer of SOI Layer with Midair Cavity

〇(M1)Shinji Takeshima¹, Kouhei Sakaike¹, Muneki Akazawa¹, Akitoshi Nakagawa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Keywords:semiconductor,flexible substrate