[13a-1C-1~10] 13.4 Si wafer processing /MEMS/Integration technology

[13a-1C-8] Formation of Single Crystalline Silicon with Midair Cavity for Meniscus Force-Mediated Local Layer Transfer

〇Muneki Akazawa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Keywords:transfer,single crystalline silicon,glass

We attempted to control size and shape of the SiO₂ column supporting the SOI layer by implantation for improvement of transfer yield. The column size was controlled by etching time and the minimum size was 104 nm. In case of implanted samples, the transfer yield of SOI layers was significantly improved to 95% under a condition of P⁺ dose of 1 × 10¹⁵ cm^-2 by optimizing the column size and shape.