Oral presentation

[13a-1C-1~10] 13.4 Si wafer processing /MEMS/Integration technology

Sun. Sep 13, 2015 9:00 AM - 11:45 AM 1C (135)

座長:河本直哉(山口大),松尾直人(兵庫県立大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[13a-1C-1] Boron laser doping on Si substrate using doping sheet

Yuka Tomizawa¹, Tetsuya Imamura¹, 〇YOSHINORI IKEDA¹, Takashi Shiro^1,2 (1.TEIJIN LIMITED, 2.NanoGram Corporation)

9:15 AM - 9:30 AM

[13a-1C-2] The pn Junction Formation by RTA and LA for Solarcells

〇Kou Gi¹, Tianxi Yang¹, Takayuki Arakaki¹, Tatsuya Okada¹, Takashi Noguchi¹, Naoya Kawamoto² (1.Univ. Ryukyus, 2.Yamaguchi Univ.)

9:30 AM - 9:45 AM

[13a-1C-3] H₂ Annealing Effect of SiO₂ Film Deposited by RF Sputtering at Room Temperature

〇Kimihiko Imura¹, Tatsuya Okada¹, Hikaru Tamashiro¹, Takashi Noguchi¹ (1.Univ. of the Ryukyus)

9:45 AM - 10:00 AM

△ [13a-1C-4] Evaluation of Poly-Si Thin Film by Raman Spectroscopy and Lifetime Measurement Using UV Excitation

〇ryo yokogawa¹, Takahiro Suzuki¹, Atsushi Ogura¹ (1.Meiji Univ.)

Break （10:00 AM - 10:15 AM）

10:15 AM - 10:30 AM

[13a-1C-5] Impurity Doping in Silicon Films by Phosphine Plasma Treatment and Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation

〇(M1)Ryota Shin¹, Seiji Morisaki¹, Seiichiro Higashi¹ (1.Hiroshima univ.)

10:30 AM - 10:45 AM

[13a-1C-6] Suppression of Intra-grain Defects by Atmospheric Pressure Micro-Thermal-Plasma-Jet Crystallization of Amorphous Silicon Strips

〇Seiji Morisaki¹, Taichi Nakatani¹, Ryota Shin¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

10:45 AM - 11:00 AM

[13a-1C-7] Analysis of Chemical Bonding State in Silicon/PET Interface by FTIR-ATR
Formed by Low-Temperature Transfer of SOI Layer with Midair Cavity

〇(M1)Shinji Takeshima¹, Kouhei Sakaike¹, Muneki Akazawa¹, Akitoshi Nakagawa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

11:00 AM - 11:15 AM

[13a-1C-8] Formation of Single Crystalline Silicon with Midair Cavity for Meniscus Force-Mediated Local Layer Transfer

〇Muneki Akazawa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

11:15 AM - 11:30 AM

▲ [13a-1C-9] Microwave-Induced Rapid Heating Used to Crystallize Thin Silicon Films

〇(M1)SHUNSUKE KIMURA¹, Kosuke Ohta¹, Tomohiko Nakamura¹, Masahiko Hasumi¹, Ayuta Suzuki², Mitsuru Ushijima², Toshiyuki Sameshima¹ (1.TUAT, 2.TEL)

11:30 AM - 11:45 AM

△ [13a-1C-10] Performance of an E/D Inverter using Self-Aligned Planar Metal Double-Gate Four-Terminal LT Poly-Si TFTs

〇Hiroki Ohsawa¹, Akito Hara¹ (1.Tohoku Gakuin Univ.)

Oral presentation

[13p-1C-1~15] 13.4 Si wafer processing /MEMS/Integration technology

Sun. Sep 13, 2015 1:15 PM - 5:15 PM 1C (135)

座長:鉄田博(日新イオン機器),上野和良(芝浦工大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[13p-1C-1] An in-line MINIMAL FAB process from producing photomasks to transistor fabrication

〇Norio Umeyama^1,2, Yuji Kitayama², Haruki Toonoe², Junko Kazusa², Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL)

1:30 PM - 1:45 PM

[13p-1C-2] Fabrication of Ring Oscillators Using Isolation Process by MINIMAL Fab

〇Fumito Imura^1,2, Kazuhiro Koga^1,2, Norio Umeyama^1,2, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL)

1:45 PM - 2:00 PM

[13p-1C-3] Evaluation of the electrical characteristics of thermal oxide film using a minimal laser heating furnace

〇kazushige sato¹, Haruki Toonoe¹, Takashi Chiba^1,3, Masao Terada^1,3, Shinichi Ikeda^1,2, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.Minimal Fab Development Association, 2.AIST, 3.Sakaguchi E.H VOC Corp)

2:00 PM - 2:15 PM

[13p-1C-4] CMOSFET Fabrication by Minimal Spin-on Dopant Process

〇Kazuhiro Koga^1,2, Fumito Imura^1,2, Yuji Kitayama², Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL)

2:15 PM - 2:30 PM

[13p-1C-5] Half-Inch Silicon CVD Reactor Using Concentrated Infrared Light Heater (5)

〇NING LI¹, HITOSHI HABUKA¹, TAKANORI MIKAHARA², SHIN-ICHI IKEDA^2,3, YUUKI ISHIDA^2,3, SHIRO HARA^2,3 (1.Yokohama National Univ., 2.MINIMAL, 3.AIST)

2:30 PM - 2:45 PM

[13p-1C-6] Gas flow control in a micro chamber of the Minimal Si-CVD equipment

〇Noriko Miura¹, Yuuki Ishida^1,2, Takahiro Ito³, Takanori Mikahara^1,2, Shinichi Ikeda^1,2, Hitoshi Habuka⁴, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.MINIMAL, 2.AIST, 3.ORIENTAL MOTER, 4.Yokohama National Univ.)

2:45 PM - 3:00 PM

[13p-1C-7] The depositional performance of the Al thin film in Minimal Sputtering System (Ⅲ)

〇Akihiko Kato^1,3, Lan Kou², Hisato Ogiso^1,2, Shizuka Nakano^1,2, Yuuki Yabuta^1,3, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.MINIMAL, 2.AIST, 3.Seinan)

3:00 PM - 3:15 PM

[13p-1C-8] Preparation of PZT multi-layer films using continual process of Minimal PZT Sol-Gel Station

〇JUNKO KAZUSA¹, Kazuhiro Koga^1,2, Norio Umeyama^1,2, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.MINIMAL, 2.AIST)

Break （3:15 PM - 3:30 PM）

3:30 PM - 3:45 PM

[13p-1C-9] Application of lithography in MINIMAL Package

〇yasuhide higashino¹, Fumito Imura^1,2, Michihiro Inoue², Arami Saruwatari^1,2, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.MINIMAL, 2.AIST)

3:45 PM - 4:00 PM

[13p-1C-10] Fluctuation factor analysis of a lithography process with MINIMAL equipment (Ⅱ)

〇Yuuji Kitayama¹, Syuuji Okuda¹, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.MINIMAL, 2.AIST)

4:00 PM - 4:15 PM

[13p-1C-11] Resist spin coating by controlling local temperature in spin cup

〇Shuuji Okuda¹, Sho Takeuchi², Yoshihisa Sensu², Takahiro Ito³, Sommawan Khumpuang⁴, Shiro Hara⁴ (1.MINIMAL, 2.LTJ, 3.ORIENTAL MOTOR, 4.AIST)

4:15 PM - 4:30 PM

[13p-1C-12] Tiny chamber- rapidly deposit/etch gases switching in shallow Bosch process

〇Hiroyuki Tanaka^1,2, Ogiso Hisato^1,2, Nakano Shizuka^1,2, Hayami Toshihiro^2,3, Miyazaki Toshiya^2,3, Tomisaka Kenichi^2,3, Tezen Hisamitsu^2,3, Khumpuang Sommawan^1,2, Hara Shiro^1,2 (1.AIST, 2.MINIMAL, 3.SPT)

4:30 PM - 4:45 PM

[13p-1C-13] Characterization of scanning methods in minimal wafer particulate scanners

〇HARUKI TONOE¹, Naoko Tajima^1,3, Toshiki Azuma², Yoshinobu Nakura², Kenjiro Iida^1,3, Sommawan Khumpuang^1,3, Shiro Hara^1,3 (1.MINIMAL, 2.YGK, 3.AIST)

4:45 PM - 5:00 PM

[13p-1C-14] Development of particle-number standard wafers for calibrating wafer-surface-scanners (Ⅱ)

〇naoko tajima^1,2, Kenjiro Iida^1,2, Kensei Ehara¹, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL)

5:00 PM - 5:15 PM

[13p-1C-15] Cleanroom-Free Minimal Air Circulation System for PLAD (Ⅴ)

〇Takashi Yajima^1,2, Masaharu Yasui^1,2, Khumpuang Sommawan^1,2, Hitoshi Maekawa^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL)

Oral presentation

[14a-1C-1~10] 13.4 Si wafer processing /MEMS/Integration technology

Mon. Sep 14, 2015 9:00 AM - 11:45 AM 1C (135)

座長:佐々木実(豊田工大),石井仁(豊橋技科大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[14a-1C-1] [Young Scientist Presentation Award Speech] Characterization of Piezo-Structure with Polymer and Pb(Zr,Ti)O₃ Thin Film

〇Takashi Okubo¹, Ryo Sano¹, Maya Shima¹, Kensuke Kanda¹, Takayuki Fujita¹, Kazusuke Maenaka¹ (1.Univ. of Hyogo)

9:15 AM - 9:30 AM

[14a-1C-2] Three-Dimensional Integration of Pulse-Frequency-Modulation A/D Converters

〇Masahide Goto¹, Kei Hagiwara¹, Yoshinori Iguchi¹, Hiroshi Ohtake¹, Takuya Saraya², Masaharu Kobayashi², Eiji Higurashi², Hiroshi Toshiyoshi², Toshiro Hiramoto² (1.NHK STRL, 2.Univ. of Tokyo)

9:30 AM - 9:45 AM

△ [14a-1C-3] Vertically integrated flexible CMOS circuit with temperature sensor

〇Wataru Honda¹, Shingo Harada¹, Ishida Shohei¹, Takayuki Arie¹, Seiji Akita¹ (1.Osaka Pre. Univ.)

9:45 AM - 10:00 AM

[14a-1C-4] Q factor enhancement of a carbon nanomechanical resonator by fluorine surface modification

〇Reo Kometani¹, Takumi Miyakoshi¹, Etsuo Maeda¹ (1.The Univ. of Tokyo)

10:00 AM - 10:15 AM

[14a-1C-5] Isolated Voltage Sensor Using Gap-Closing Type Electrode

Naoki Nobunaga¹, Shinya Kumagai¹, Hiroki Ishihara², Makoto Ishii², 〇Minoru Sasaki¹ (1.Toyota Tech. Inst., 2.Yazaki Corp.)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[14a-1C-6] Wavelength selective silicon-on-insulator diode uncooled infrared focal plane array

〇DAISUKE FUJISAWA¹, OGAWA SHINPEI¹, HATA HISATOSHI¹, UETSUKI MITSUHARU¹, MISAKI KOJI¹, TAKAGAWA YOUSUKE², KIMATA MASAFUMI² (1.Mitsubishi Electric Corp., 2.Ritsumeikan Univ.)

10:45 AM - 11:00 AM

[14a-1C-7] Mushroom plasmonic metamaterial IR absorbers for wideband uncooled infrared sensors with advanced functions

〇SHIMPEI OGAWA¹, DAISUKE FUJISAWA¹, HISATOSHI HATA¹, MASAFUMI KIMATA² (1.Mitsubishi Electric Corp., 2.Ritsumeikan Univ.)

11:00 AM - 11:15 AM

[14a-1C-8] Process Issues in Optical Integrated Circuits using Silicon Photonics Technology (III)
Fabrication of Low-loss Waveguides with Low LER and Clean Surface

〇Tsuyoshi Horikawa^1,2, Daisuke Shimura², Seok-Hwan Jeong², Masatoshi Tokushima², Keizo Kinoshita², Tohru Mogami² (1.AIST, 2.PETRA)

11:15 AM - 11:30 AM

[14a-1C-9] Process Issues in Optical Integrated Circuits using Silicon Photonics Technology (IV)
Developments on Ge/Si Selective Epitaxial Growth Processes for Photodetector

〇Keizo Kinoshita¹, Shigekazu Okumura¹, Junichi Fujikata¹, Tsuyoshi Horikawa^1,2, Tohru Mogami¹ (1.PETRA, 2.AIST)

11:30 AM - 11:45 AM

[14a-1C-10] PDMS-made Bacteria Trapping Chip Using Beads Ⅳ -Optical response of Legionella by ultraviolet light irradiation-

〇Yusuke Nishimura¹, Makoto Ishida¹, Kazuaki Sawada¹, Hiromu Ishii¹, Katsuyuki Machida^2,3, Kazuya Masu², Changle Wang⁴, Ken-ichiro Iida⁴, Mitsumasa Saito⁴, Shin-ichi Yoshida⁴ (1.Toyohashi Univ. of Tech, 2.Tokyo Inst. of Tech, 3.NTT-AT, 4.Graduate School of Medical Sciences, Kyusyu Univ.)

Oral presentation

[14p-1C-1~16] 13.4 Si wafer processing /MEMS/Integration technology

Mon. Sep 14, 2015 1:15 PM - 5:30 PM 1C (135)

座長:中村友二(富士通研),筑根敦弘(大陽日酸)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[14p-1C-1] Fracture Strength of P-SiN thin Film

〇Norio Ishitsuka¹, Noriyuki Sakuma¹, Yasuo Onose² (1.Hitachi R&D Group, 2.Hitachi Automotive Systems)

1:30 PM - 1:45 PM

[14p-1C-2] Study on template release force in peeling release method

〇Takamitsu Tochino¹, Tatsuya Iida¹, Masaaki Yasuda¹, Hiroaki Kawata¹, Yoshihiko Hirai¹ (1.Osaka Pref. Univ.)

1:45 PM - 2:00 PM

△ [14p-1C-3] Effect of High-Aspect-Ratio-Via Formation on Transistor Performance in Via-last Backside-via Process for 3D IC

〇Yohei Sugawara¹, Hisashi Kino², Takafumi Fukushima^1,3, Kang-Wook Lee³, Mitsumasa Koyanagi³, Tetsu Tanaka^1,4 (1.Dept. of Bioengineering and Robotics, Tohoku Univ., 2.FRIS, Tohoku Univ., 3.NICHe, Tohoku Univ., 4.Dept. of Biomedical Engineering, Tohoku Univ.)

2:00 PM - 2:15 PM

△ [14p-1C-4] Investigation of Local Bending Stress in 3DIC Using Retention Time Characteristics of DRAM Cell Array

〇SEIYA TANIKAWA¹, HISASHI KINO², TAKAFUMI FUKUSHIMA¹, KOYANAGI MITSUMASA³, TETSU TANAKA^1,4 (1.Dept. of Bioengineering and Robotics, Tohoku Univ., 2.FRIS, Tohoku Univ., 3.NIChe, Tohoku Univ., 4.Dept. of Biomedical Engineering, Tohoku Univ.)

2:15 PM - 2:30 PM

△ [14p-1C-5] Relationship between friction force and water behavior of PVA roller brushes on plates with different surface wettability

〇(M1)kenya nishio¹, Toshiyuki Sanada¹, Akira Hukunaga², Hirokuni Hiyama² (1.Shizuoka Univ., 2.Ebara Co.)

2:30 PM - 2:45 PM

[14p-1C-6] Characteristic study of PVD-Co(W) single barrier/liner for highly reliable ULSI Cu interconnects

〇(DC)Taewoong Kim¹, Takeshi Momose¹, Tsunoda Takaaki², Takayuki Moriwaki², Takashi Nakagawa², Yukihiro Shimogaki¹ (1.The Univ. of Tokyo, 2.CANON ANELVA CORPORATION)

2:45 PM - 3:00 PM

[14p-1C-7] Printing deposition of thin Cu films under-short-distance irradiation of ballistic electrons

〇Ryutaro Suda¹, Mamiko Yagi¹, Akira Kojima¹, Jun-ichi Shirakashi¹, Nobuyoshi Koshida¹ (1.Tokyo Univ. of Agri. & Technol.)

3:00 PM - 3:15 PM

[14p-1C-8] Controlling Nickelidation Process of Si Nanowire by Ar⁺ Ion Irradiation

〇XU ZHANG¹, Shuichiro Hashimoto¹, Kohei Takei¹, Jing Sun¹, Taiyu Xu¹, Shuhei Asada¹, Toshihiro Usuda¹, Motohiro Tomita^1,2,3, Ryosuke Imai³, Atsushi Ogura³, Takashi Matsukawa⁴, Meishoku Masashihara⁴, Takanobu Watanabe¹ (1.Waseda Univ., 2.JSPS Res. Fellow PD, 3.Meiji Univ., 4.AIST)

Break （3:15 PM - 3:30 PM）

3:30 PM - 3:45 PM

[14p-1C-9] Preparation of low-k Materials by Thermal Oxidation of p Type Porous Si

〇Tomihiro Sonegawa¹, Noriaki Oyama¹ (1.Univ. of the ryukyus)

3:45 PM - 4:00 PM

[14p-1C-10] The gap-fill technology in the thermal CVD silicon deposition

〇NOBUHIRO TAKAHASHI¹, KAKIMOTO AKIMOTO¹, OKADA MITSUHIRO¹, KOMORI KATSUHIKO¹ (1.Tokyo Electron Tohoku)

4:00 PM - 4:15 PM

[14p-1C-11] Generation of hydrogen radical at atmospheric pressure by thermal filament method and measurement of the density

〇Yuji Okamoto^1,2, Fatima Zohra Dahmani³, Daiki Tsutsumi⁴, Takamasa Ishigaki⁴, Masatomo Sumiya¹ (1.NIMS, 2.Tsukuba Univ., 3.USTO-MB, 4.Hosei Univ.)

4:15 PM - 4:30 PM

[14p-1C-12] Thermodynamic analysis on the reduction process of chlorosilane gas by hydrogen radical

〇Kenji Itaka¹, Masatomo Sumiya², Takuya Hashimoto³ (1.Hirosaki Univ., 2.NIMS, 3.Nihon Univ.)

4:30 PM - 4:45 PM

[14p-1C-13] Transport Phenomena for Silicon Epitaxial Growth on 450-mm-Diameter Substrate

〇AYAMI YAMADA¹, MISAKO MATSUI¹, HITOSHI HABUKA¹ (1.Yokohama Nat. Univ.)

4:45 PM - 5:00 PM

[14p-1C-14] In-Situ Observation of thermal behavior in CVD reactor

〇kento miyazaki¹, Ayumi Saito¹, Misako Matsui¹, Hitoshi Habuka¹ (1.Yokohama Nat. Univ)

5:00 PM - 5:15 PM

[14p-1C-15] By-product Formation in a SiHCl₃-H₂ System for Silicon Film Deposition

Ayumi Sakura¹, Ayumi Saito¹, 〇Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

5:15 PM - 5:30 PM

[14p-1C-16] Development of silicon film growth at high rate in SiHCl₃-SiH_x-H₂ system

〇Ayumi Saito¹, Ayumi Sakurai¹, Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

Poster presentation

[15a-PB4-1~9] 13.4 Si wafer processing /MEMS/Integration technology

Tue. Sep 15, 2015 9:30 AM - 11:30 AM PB4 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[15a-PB4-1] An Evaluation on A Sub-1G-to-20G Integrated MEMS Accelerometer

〇Daisuke Yamane^1,4, Toshifumi Konishi², Hiroshi Toshiyoshi^3,4, Kazuya Masu^1,4, Katsuyuki Machida^1,2,4 (1.Tokyo Tech., 2.NTT-AT, 3.The Univ. of Tokyo, 4.JST-CREST)

9:30 AM - 11:30 AM

[15a-PB4-2] A Study of Gain-Controlled Sensor Circuits for CMOS-MEMS Accelerometer

〇Toshifumi Konishi¹, Daisuke Yamane^2,4, Motohiro Takayasu^2,4, Hiroyuki Ito^2,4, Shiro Dosho^2,4, Noboru Ishihara^2,4, Kazuya Masu^2,4, Hiroshi Toshiyoshi^3,4, Katsuyuki Machida^1,2,4 (1.NTT-AT, 2.Tokyo Tech., 3.Univ. of Tokyo, 4.JST-CREST)

9:30 AM - 11:30 AM

[15a-PB4-3] An Evaluation on Adhesion Strength with Metal Structure for MEMS Accelerometer

〇TERUAKI SAFU¹, Toshifumi Konishi¹, Takaaki Matsushima¹, Daisuke Yamane^2,4, Hiroshi Toshiyoshi^3,4, Masato Sone^2,4, Kazuya Masu^2,4, Katsuyuki Machida^1,2,4 (1.NTT-AT Corp, 2.Tokyo Tech, 3.The Univ. of Tokyo, 4.JST-CREST)

9:30 AM - 11:30 AM

[15a-PB4-4] Control of full width at half maximum of detection wavelength for wavelength-selective uncooled infrared sensors using two-dimensional plasmonic absorbers

〇SHIMPEI OGAWA¹, DAISUKE FUJISAWA¹, MASAFUMI KIMATA² (1.Mitsubishi Electric Corp., 2.Ritsumeikan Univ.)

9:30 AM - 11:30 AM

[15a-PB4-5] Cu film deposited by super critical CO₂ method to Pd barrier layer formedwith high vacuum spattering

〇kei nisikawa¹, Yoshio Uhara¹, Masatoshi Itho¹, Sigeru Saito¹ (1.Tokyo Univ. of Science)

9:30 AM - 11:30 AM

[15a-PB4-6] Electromigratiom tests of solder bumps with a new test-structure using flat cables

〇Naoki Azuma¹, Misaki Ohwada¹, Takumi Abe¹, Tsutomu Nakada², Makoto Kubota², Kazuyoshi Ueno¹ (1.Shibaura Inst. Tech., 2.EBARA Corp.)

9:30 AM - 11:30 AM

[15a-PB4-7] Self-Alignment Vertical-Type Thin-Film Transistors (TFTs) with Transparent Oxide IGZO as Semiconductor

〇Fumiaki Kurihara¹, Hiroyuki Okada¹, Shigeki Naka¹ (1.Univ. of Toyama)

9:30 AM - 11:30 AM

▼ [15a-PB4-8] Electrical Properties of Pulsed-Laser Crystallized Poly-Si Thin Films Grown on YSZ Crystallization-Induction Layers by Two-Step Irradiation Method

〇Lien Mai¹, Susumu Horita¹ (1.JAIST)

9:30 AM - 11:30 AM

△ [15a-PB4-9] LT Metal Double-Gate Junctionless P-channel Poly-Ge TFT with High-k Gate Dielectric on Glass Substrate

〇Yuya Nishimura¹, Syota Nibe¹, Akito Hara¹ (1.Tohoku Gakuin Univ.)

Sessions

13 Semiconductors » 13.4 Si wafer processing /MEMS/Integration technology

[13a-1C-1~10] 13.4 Si wafer processing /MEMS/Integration technology

△ [13a-1C-4] Evaluation of Poly-Si Thin Film by Raman Spectroscopy and Lifetime Measurement Using UV Excitation

▲ [13a-1C-9] Microwave-Induced Rapid Heating Used to Crystallize Thin Silicon Films

△ [13a-1C-10] Performance of an E/D Inverter using Self-Aligned Planar Metal Double-Gate Four-Terminal LT Poly-Si TFTs

[13p-1C-1~15] 13.4 Si wafer processing /MEMS/Integration technology

[14a-1C-1~10] 13.4 Si wafer processing /MEMS/Integration technology

△ [14a-1C-3] Vertically integrated flexible CMOS circuit with temperature sensor

[14p-1C-1~16] 13.4 Si wafer processing /MEMS/Integration technology

△ [14p-1C-3] Effect of High-Aspect-Ratio-Via Formation on Transistor Performance in Via-last Backside-via Process for 3D IC

△ [14p-1C-4] Investigation of Local Bending Stress in 3DIC Using Retention Time Characteristics of DRAM Cell Array

△ [14p-1C-5] Relationship between friction force and water behavior of PVA roller brushes on plates with different surface wettability

[15a-PB4-1~9] 13.4 Si wafer processing /MEMS/Integration technology

▼ [15a-PB4-8] Electrical Properties of Pulsed-Laser Crystallized Poly-Si Thin Films Grown on YSZ Crystallization-Induction Layers by Two-Step Irradiation Method

△ [15a-PB4-9] LT Metal Double-Gate Junctionless P-channel Poly-Ge TFT with High-k Gate Dielectric on Glass Substrate

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