[13a-1D-1~11] 15.4 III-V-group nitride crystals

[13a-1D-10] Simultaneous analysis of micro-area strain and Indium composition in selective-area grown InGaN using X-ray micro-beam

〇Toshiya Yokogawa¹, Takuya Kakoi¹, Yasuhiko Imai², Shigeru Kimura² (1.Yamaguchi Univ., 2.JASRI)

Keywords:nitride based semiconductor,X-ray fluorescence,X-ray diffraction

Bulk GaN substrate has low dislocation density, high thermal conductivity and low electrical resistivity. In general such bulk GaN substrate is grown by using sapphire substrate. Therefore the selective-area growth is useful to obtaind high quality bulk GaN substrate. In this paper, we demonstrate the simultaneous analysis of micro-area strain with the diffraction and X-ray fluorescence of Indium using X-ray micro-beam in InGaN layer on ELO-GaN. We confirmed the reduction of In composition in InGaN layer grown on the seed area of ELO-GaN.