[13a-1D-1~11] 15.4 III-V-group nitride crystals

[13a-1D-2] Synthesis and evaluation of properties on a quasi-Ⅲ-Ⅴnitride semiconductor of ZnSnN₂.

〇Fumio Kawamura¹, Naoomi Yamada², Takashi Taniguchi¹ (1.NIMS, 2.Chubu Univ.)

Keywords:semiconductor,photocatalyst,ubiquitous element

The ZnSnN₂ compound is a kind of quasi-III-V nitride semiconductors, whose possible existence was anticipated by a first principle calculation. The bandgap of the The ZnSnN₂ is tunable from 1.4 to 5.5 eV by displacement of Ge or Si into Sn site. The band structure of this material is direct transition, leading the expectation of next generation solar cell or photocatalyst, whose possibilities has been supported by the fact that the ZnSnN₂ is composed of only the ubiquitous elements. However, the bulk ZnSnN₂ crystals had not been succeeded because of low decomposition temperature. We succeeded in the synthesis of high-quality bulk ZnSnN₂ crystals using metathesis reaction under high-pressure.