Oral presentation

[13a-1D-1~11] 15.4 III-V-group nitride crystals

Sun. Sep 13, 2015 8:45 AM - 11:45 AM 1D (141+142)

座長:平山秀樹(理研),長谷川繁彦(阪大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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8:45 AM - 9:00 AM

[13a-1D-1] Wafer bonding method for group III nitride semiconductors

〇Ryoji Shinoda¹, Yousuke Katsu¹, Norikatsu Koide¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center)

9:00 AM - 9:15 AM

[13a-1D-2] Synthesis and evaluation of properties on a quasi-Ⅲ-Ⅴnitride semiconductor of ZnSnN₂.

〇Fumio Kawamura¹, Naoomi Yamada², Takashi Taniguchi¹ (1.NIMS, 2.Chubu Univ.)

9:15 AM - 9:30 AM

[13a-1D-3] Faburication of GaN nanostructures using nano-silica sphere

〇Kouki Saitou¹, Hiroto Sekiguchi¹, Keisuke Yamane¹, Hiroshi Okada^2,1, Muto Hiroyuki¹, Katumi Kishino³, Akihiro Wakahara^1,2 (1.Toyohashi Univ. Tech., 2.EIIRIS, 3.Sophia Univ.)

9:30 AM - 9:45 AM

[13a-1D-4] Improved GaN/AlN Interface Abruptness and Enhanced Photoelectrochemical Properties by Optimizing the Growth Conditions Transition

〇Akihiro Nakamura¹, Michihiro Suzuki¹, Katsushi Fujii², Masakazu Sugiyama¹, Yoshiaki Nakano¹ (1.Tokyo Univ., 2.GS+I)

9:45 AM - 10:00 AM

△ [13a-1D-5] Low Ohmic contact resistance V-based electrode for high AlN molar fraction n-type AlGaN

〇kazuki mori¹, toshiki kusafuka¹, motoaki iwaya¹, tetsuya Takeuchi¹, satoshi kamiyama¹, isamu akasaki^1,2, hiroshi amano^2,3 (1.Meijo univ., 2.Akasaki Res. Cen., 3.Nagoya Univ.)

10:00 AM - 10:15 AM

[13a-1D-6] Modulation Characteristics of Quantum Well-Embedded Light-Emitting Transistors

〇Kazuhide Kumakura¹, Junichi Nishinaka¹, Hideki Yamamoto¹ (1.NTT BRL)

10:15 AM - 10:30 AM

[13a-1D-7] Characterization of Electrical Properties in AlGaN/GaN Recessed TLM Device Structures

〇Narihiko Maeda¹, Masanobu Hiroki², Satoshi Sasaki² (1.Tokyo Univ. of Tech., 2.NTT Basic Res. Labs.)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

△ [13a-1D-8] Characterization of GaN epilayer on (0001) sapphire using THz ellipsometry

〇KOHEI TACHI¹, TAKASHI FUJII^1,3, TSUTOMU ARAKI¹, YASUSHI NANISHI¹, TAKESHI NAGASHIMA², TOSHIYUKI IWAMOTO³, YUKINORI SATO³, NAOTAKE MORITA⁴, RYUICHI SUGIE⁴, SATOSHI KAMIYAMA⁵ (1.Ritsumeikan Univ., 2.Setsunan Univ., 3.PNP., 4.TRC., 5.Meijo Univ.)

11:00 AM - 11:15 AM

△ [13a-1D-9] Evaluation of m-plane GaN by using laser-induced THz emission

〇Yuji Sakai¹, Iwao Kawayama¹, Hidetoshi Nakanishi², Masayoshi Tonouchi¹ (1.ILE, Osaka Univ., 2.SCREEN Holdings Co., Ltd.)

11:15 AM - 11:30 AM

[13a-1D-10] Simultaneous analysis of micro-area strain and Indium composition in selective-area grown InGaN using X-ray micro-beam

〇Toshiya Yokogawa¹, Takuya Kakoi¹, Yasuhiko Imai², Shigeru Kimura² (1.Yamaguchi Univ., 2.JASRI)

11:30 AM - 11:45 AM

[13a-1D-11] Band gap modulation of hexagonal AlN by an electric field

〇Yuichi Ota¹ (1.TIRI)

Oral presentation

[13p-1D-1~26] 15.4 III-V-group nitride crystals

Sun. Sep 13, 2015 1:15 PM - 8:15 PM 1D (141+142)

座長:斉藤真(三菱化学),岡田成仁(山口大),岩谷素顕(名城大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

△ [13p-1D-1] The Effect of Oxygen Impurity on Lattice Constants in GaN Crystals Grown with the Na-Flux Method

〇Masayuki Imanishi¹, Shuhei Fukuda², Kosuke Murakami¹, Hiroki Imabayashi¹, Hideo Takazawa¹, Daisuke Matsuo¹, Mihoko Maruyama¹, Mamoru Imade¹, Masashi Yoshimura¹, Yoshiyuki Tsusaka², Junji Matsui³, Yusuke Mori¹ (1.Osaka Univ., 2.Univ. of Hyogo, 3.Nanotech. Lab.)

1:30 PM - 1:45 PM

[13p-1D-2] High quality GaN bulk crystal growth by acidic ammonothermal method

〇MAKOTO SAITO^1,2, Quanxi Bao^1,3, Kohei Kurimoto^1,3, Daisuke Tomida¹, Kazunobu Kojima¹, Yoshiki Yamazaki¹, Yuji Kagamitani², Rinzo Kayano³, Toru Ishiguro¹, Shigefusa Chichibu¹ (1.IMRAM Tohoku Univ., 2.Mitsubishi Chemical, 3.Japan Steel Works)

1:45 PM - 2:00 PM

[13p-1D-3] Characterization of Helical dislocations in ammonothermal GaN substrate

〇Kayo Horibuchi¹, Satoshi Yamaguchi¹, Yasuji Kimoto¹, Koichi Nishikawa¹, Tetsu Kachi¹ (1.Toyota Central R&D Labs.)

2:00 PM - 2:15 PM

[13p-1D-4] Evaluation of Crystal Defects in GaN by X-ray topography

〇Katsuhiko Nakai¹, Tetsuya Nagai¹, Kengo Noami¹, Masayuki Sasaki¹, Toshiro Futagi¹ (1.NSST)

2:15 PM - 2:30 PM

△ [13p-1D-5] Effect of growth condition on growth rate of AlN grown from Ga-Al solution

〇Masayoshi Adachi¹, Ryuta Sekiya¹, Hiroyuki Fukuyama¹ (1.Tohoku Univ.)

2:30 PM - 2:45 PM

[13p-1D-6] GaN facet control in the Hydride Vapor Phase Epitaxy

〇Shin Goubara¹, Hiroshi Ihara¹, Yusho Dempo¹, Narihito Okada¹, Keisuke Yamane², Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.Toyohashi Univ. of Technologhy)

2:45 PM - 3:00 PM

[13p-1D-7] Impact of quality of SiO₂mask deposited by PECVD on selective area growth for GaN in HVPE growth

〇(M1)Norihiro Itagaki¹, Shin Goubara¹, Keisuke Yamane², Narihito Okada¹, Ryou Inomoto¹, Shinichi Motoyama³, Takayuki Kobayashi³, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.Toyohashi Univ. of Technology, 3.SAMCO CORPORATION)

3:00 PM - 3:15 PM

△ [13p-1D-8] Characterization of Defect Distribution in Semipolar (20-21) GaN Thick Films by X-ray Microdiffraction

〇toshiro uchiyama¹, Shotaro Takeuchi¹, Takuji Arauchi¹, Yasuhiro Hashimoto², Keisuke Yamane³, Narihito Okada², Yasuhiko Imai⁴, Shigeru Kimura⁴, Kazuyuki Tadatomo², Akira Sakai¹ (1.Osaka Univ., 2.Yamaguchi Univ., 3.Toyohashi Univ. of Tech., 4.JASRI/SPring-8)

3:15 PM - 3:30 PM

▲ [13p-1D-9] Evaluation of dislocations in HVPE GaN single crystal by KOH etching with Na₂O₂ additive and cathodoluminescence mapping

〇Yongzhao Yao¹, Yukari Ishikawa^1,2, Yoshihiro Sugawara¹, Daisaku Yokoe¹, Masaki Sudo², Narihito Okada³, Kazuyuki Tadatomo³ (1.JFCC, 2.Nagoya Inst. of Tech, 3.Yamaguchi Univ.)

Break （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

[13p-1D-10] Improvement of crystallinity of GaN crystals grown by OVPE with Ga + H₂O reaction

〇(B)Yohei Yamaguchi¹, Yuuki Taniyama¹, Hiroaki Takatsu¹, Tomoaki Sumi¹, Akira Kitamoto¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Yusuke Mori¹ (1.Osaka Univ., 2.Itochu Plastics Inc.)

4:00 PM - 4:15 PM

△ [13p-1D-11] Thick InGaN Layer Growth by Tri-Halide Vapor Phase Epitaxy

〇Takahide Hirasaki¹, Misaki Meguro¹, Quang Tu Thieu², Hisashi Murakami¹, Yoshinao Kumagai¹, Bo Monemar^2,3, Akinori Koukitu¹ (1.Tokyo Univ. of A&T, 2.TUAT GIRO, 3.Linkoping Univ.)

4:15 PM - 4:30 PM

[13p-1D-12] Influences of buffer-layer annealing on a-plane AlN grown on r-plane sapphire

〇Chiahung Lin¹, Daiki Yasui¹, Shinya Tamaki¹, Hideto Miyake¹, Kazumasa Hiramatsu¹ (1.Mie Univ.)

4:30 PM - 4:45 PM

[13p-1D-13] Si-doped AlN substrates prepared by HVPE and their application to vertical Schottky barrier diodes

〇REO YAMAMOTO^1,2, Toru Kinoshita¹, Toru Nagashima¹, Toshiyuki Obata¹, Shinya Takashima³, Rie Togashi², Yoshinao Kumagai², Raoul Schlesser⁴, Ramon Collazo⁵, Akinori Koukitu², Zlatko Sitar⁵ (1.Tokuyama Corporation, 2.Tokyo Univ. of Agri. and Tech., 3.Fuji Electric Co., Ltd., 4.Hexa Tech, Inc., 5.North Carolina State University)

4:45 PM - 5:00 PM

[13p-1D-14] Design of Semipolar AlGaN/AlN Quantum Wells for Stimulated Emissions

〇(D)Shuhei Ichikawa¹, Mitsuru Funato¹, Yosuke Iwasaki², Yoichi Kawakami¹ (1.Kyoto Univ., 2.JFE Mineral Co. Ltd.)

5:00 PM - 5:15 PM

[13p-1D-15] Investigation of surface smoothness of AlN templates on sapphire

〇Syouta Katsuno¹, Koudai Hagiwara¹, Toshiki Yasuda¹, Norikatsu Koide¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,3, Hiroshi Amano^2,3 (1.Meijo Univ., 2.Nagoya Univ., 3.Akasaki Research Center)

5:15 PM - 5:30 PM

[13p-1D-16] Growth of a-AlN on r-sapphire substrates

〇Masafumi Jo¹, Hideki Hirayama¹ (1.RIKEN)

5:30 PM - 5:45 PM

[13p-1D-17] High-quality AlN template for deep-UV LEDs grown on facet controlled patterned sapphire substrate(FC-PSS)

〇Yuuya Kanazawa^1,2, Hideki Hirayama¹, Noritoshi Maeda¹, Masafumi Jo¹, Norihiko Kamata², Yukio Kashima³, Eriko Matsuura³, Satoshi Shimatani⁴, Mitsunori Kokubo⁵, Takaharu Tashiro⁵, Takafumi Ohkawa⁶, Ryuichiro Kamimura⁶, Yamato Osada⁶ (1.RIKEN, 2.Saimata Univ., 3.MARUBUN, 4.TOKYO OHKA KOGYO, 5.TOSHIBA MACHINE, 6.ULVAC)

5:45 PM - 6:00 PM

△ [13p-1D-18] Growth and optical properties of semi-polar AlN/AlGaN layers grown on m-plane sapphire substrates

〇Issei Oshima^1,2, Masafumi Jo¹, Noritoshi Maeda¹, Norihiko Kamata², Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ.)

Break （6:00 PM - 6:15 PM）

6:15 PM - 6:30 PM

△ [13p-1D-19] Study on the Growth of AlInN by Radical Enhanced Metal Organic Chemical Vapor Deposition

〇kazuki iwamoto¹, Yi Lu¹, Shinnosuke Takai¹, Osamu Oda¹, Hiroki Kondo¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

6:30 PM - 6:45 PM

△ [13p-1D-20] Influence of constituents in ScAlMgO₄ substrates on properties of GaN epitaxial layers

〇(D)Takuya Ozaki¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

6:45 PM - 7:00 PM

[13p-1D-21] Atomic layer epitaxy of GaN-based thin-film

〇Yoshihiro Kato¹, Koji Neishi¹, Song Yun Kang¹, Ayuta Suzuki¹, Yoshio Honda², Hiroshi Amano² (1.Tokyo Electron Ltd., 2.Nagoya Univ.)

7:00 PM - 7:15 PM

[13p-1D-22] Verticality control of hetero-interface at GaN double polarity selective area growth using MOVPE

〇Noriyuki Osumi¹, Kenta Kuze¹, Yoku Inoue¹, Takayuki Nakano¹ (1.Sizuoka Univ.)

7:15 PM - 7:30 PM

△ [13p-1D-23] Mechanism of Stress Control for GaN Growth on Si Using AlN Interlayers

〇Michihiro Suzuki¹, Akihiro Nakamura¹, Masakazu Sugiyama¹, Yoshiaki Nakano¹ (1.UTokyo)

7:30 PM - 7:45 PM

[13p-1D-24] Observation of dislocations in GaN layer deposited on 4-inch Si(111) with AlGaN/AlN strained layer superlattice

Yoshihiro Sugawara¹, 〇Yukari Ishikawa¹, Arata Watanabe², Makoto Miyoshi², Takashi Egawa² (1.JFCC, 2.Nagoya Inst. Tech.)

7:45 PM - 8:00 PM

[13p-1D-25] STEM observations of the self-generated micro-cracks in ultra-thin AlN/GaN super-lattice grown on Si(110) substrates

〇Xu-Qiang Shen¹, Tokio Takahashi¹, Toshihide Ide¹, Mitsuaki Shimizu¹ (1.AIST)

8:00 PM - 8:15 PM

[13p-1D-26] Real-time measurement of low concentration Cp₂Mg using infrared spectroscopy

〇Daisuke Hayashi¹, Atsuko Teraoka¹, Yuhei Sakaguchi¹, Masakazu Minami¹, Hiroshi Nishizato¹ (1.HORIBA STEC)

Oral presentation

[14a-1D-1~11] 15.4 III-V-group nitride crystals

Mon. Sep 14, 2015 8:45 AM - 11:45 AM 1D (141+142)

座長:竹内哲也(名城大),中野貴之(静岡大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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8:45 AM - 9:00 AM

[14a-1D-1] Low-temperature (~400 deg. C) growth of InN-based materials by NH₃ decomposition catalyst-assisted MOVPE (I): InN growth

〇Akio Yamamoto^1,2, Kazuki Kodama^1,2, Naoteru Shigekawa³, Takashi Matsuoka⁴, Masaaki Kuzuhara¹ (1.Univ. of Fukui, 2.JST-CREST, 3.Osaka City Univ., 4.Tohoku Univ.)

9:00 AM - 9:15 AM

[14a-1D-2] Low-temperature (~400 deg. C) growth of InN-based materials by NH₃ decomposition catalyst-assisted MOVPE (II): In_xGa_1-xN(x~0.3) growth

〇Akio Yamamoto^1,2, Kazuki Kodama^1,2, Naoteru Shigekawa³, Takashi Matsuoka⁴, Masaaki Kuzuhara¹ (1.Univ. of Fukui, 2.JST-CREST, 3.Osaka City Univ., 4.Tohoku Univ)

9:15 AM - 9:30 AM

△ [14a-1D-3] Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar (000\overline{1}) p-type GaN grown by MOVPE

〇(M1)Ryohei Nonoda¹, Kanako Shojiki¹, Tomoyuki Tanikawa¹, Shigeyuki Kuboya¹, Ryuji Katayama¹, Takashi Matsuoka¹ (1.IMR, Tohoku Univ.)

9:30 AM - 9:45 AM

[14a-1D-4] Growth of High-Indium-Content InGaN on semipolar (1–101) GaN Stripe Crystals

〇Maki Kushimoto¹, Yoshio Honda¹, Hiroshi Amano^1,2 (1.Nagoya Univ., 2.Akasaki Research Center)

9:45 AM - 10:00 AM

[14a-1D-5] Growth of strain-compensated InGaN/AlN/AlGaN multiple quantum wells

〇(M2)shen lu¹, Daisuke Iida¹, Sota Hirahara¹, Kazuhiro Ohkawa¹ (1.Tokyo Univ. of Science)

10:00 AM - 10:15 AM

△ [14a-1D-6] Enhancement of light output power of amber light-emitting diodes by
strain-compensated AlN/AlGaN barriers

〇Daisuke Iida¹, Shen Lu¹, Sota Hirahara¹, Kazumasa Niwa², Satoshi Kamiyama², Kazuhiro Ohkawa¹ (1.Tokyo Univ. of Sci., 2.Meijo Univ.)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[14a-1D-7] InGaN/GaN MQW Growth on 200 mm Si Wafer by Fast Rotating Single-Wafer MOCVD

〇Yasushi Iyechika¹, Hideshi Takahashi¹, Yuusuke Sato¹ (1.Nuflare Technology)

10:45 AM - 11:00 AM

[14a-1D-8] InGaN/GaN multiple quantum well growth on (0001) GaN by raised pressure MOVPE

〇Akira Tamura¹, Tetsuya Yamamoto¹, Yoshio Honda¹, Hiroshi Amano^1,2 (1.Nagoya Univ., 2.Akasaki Research Center)

11:00 AM - 11:15 AM

△ [14a-1D-9] Growth of InGaN well layer with an in-situ monitoring system

〇(M1)Tetsuya Yamamoto¹, Akira Tamura¹, Yoshio Honda¹, Hiroshi Amano^1,2 (1.Nagoya Univ., 2.ARC)

11:15 AM - 11:30 AM

[14a-1D-10] Barrier layer thickness dependence in GaInN/GaN superlattice characterized by in situ X-ray diffraction measurement

〇junya ohsumi¹, Koji Ishihara¹, Taiji Yamamoto¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ.)

11:30 AM - 11:45 AM

△ [14a-1D-11] Carrier gas dependence of GaSb molar fraction in GaNSb

〇(M2)Daisuke Komori¹, Kaku Takarabe¹, Kenta Suzuki¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki iwaya¹, Takao Miyajima¹, Norikatu Koide¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.ARC, Nagoya Univ.)

Oral presentation

[14p-CE-1~4] 15.4 III-V-group nitride crystals

Mon. Sep 14, 2015 1:00 PM - 2:15 PM CE (Century Hall)

座長:荒木努(立命大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:15 PM

[14p-CE-1] [Young Scientist Presentation Award Speech] Formation mechanism of threading dislocations depending on initial III/V ratio in PAMBE-grown AlN layers on SiC substrates

〇Mitsuaki Kaneko¹, Tsunenobu Kimoto¹, Jun Suda¹ (1.Kyoto Univ.)

1:15 PM - 1:30 PM

[14p-CE-2] Observation of initial strain in MBE-grown GaN by in situ synchrotron X-ray diffraction

〇Takuo Sasaki¹, Ryota Deki², Masamitu Takahasi^1,2 (1.JAEA, 2.Univ. Hyogo)

1:30 PM - 1:45 PM

[14p-CE-3] Detailed study of growth process of InN by DERI method

〇Satoshi Usuda¹, Kazuki Komura¹, Aranami Manato¹, Araki Tsutomu¹, Nanishi Yasushi¹ (1.Ritsumei Univ.)

1:45 PM - 2:00 PM

[14p-CE-4] Highly density nitride nanocolumn growth on graphene/SiO₂ for high efficiency LED

〇yuta konno¹, Hiroaki Hayashi¹, Takura Suzuki¹, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center)

Break （2:00 PM - 2:15 PM）

Poster presentation

[14p-PB12-1~23] 15.4 III-V-group nitride crystals

Mon. Sep 14, 2015 6:30 PM - 8:30 PM PB12 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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6:30 PM - 8:30 PM

[14p-PB12-1] Study on emission enhancement of GaN-LEDs with the surface coated in transparent oxide films

〇Tomoki Kabata¹, Mayuko Okada¹, Tatsuya Tsutsumi¹, Makoto Miyoshi¹, Takashi Egawa¹, Shuji Osono², Kazuhiro Honda², Hideaki Zama² (1.Nagoya Inst. of Tech, 2.ULVAC)

6:30 PM - 8:30 PM

[14p-PB12-2] Investigation of device structure in UV hetero-field-effect-transistor-type photosensors

〇Yuma Yamamoto¹, Akira Yoshikawa^1,3, Toshiki Okumura¹, Toshiki Kusafuka¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi kamiyama¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, 3.Asahi-Kasei Corporation)

6:30 PM - 8:30 PM

[14p-PB12-3] Effects of Thermal Stability on Characteristics of InAlN/GaN Heterostructure Grown on Si

〇(M1)Yuya Urayama¹, Arata Watanabe¹, Freedsman Joseph¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech.)

6:30 PM - 8:30 PM

[14p-PB12-4] First-principles calculations of lattice constants, elastic constants, piezoelectric constants, and spontaneous polarization in wurtzite In_xAl_1-xN

〇Kazuhiro Shimada¹, Daichi Ito¹, Iwasaki Katsunori¹, Shigefusa Chichibu² (1.Kanto Gakuin Univ., 2.IMRAM-Tohoku Univ.)

6:30 PM - 8:30 PM

[14p-PB12-5] Numerical Study on Phonon Properties of Nitride Compound Semiconductor Alloy by Forced Vibrational Method

〇TAKUYA NAMBU¹, Shin Oyagi¹, Md.Sherajul Islam¹, Akihiro Hashimoto¹ (1.Fukui Univ.)

6:30 PM - 8:30 PM

[14p-PB12-6] First-principles calculation on electronic structure changes by lattice distortions at a defect in GaN

〇Takeshi Tsujio¹, Masato Oda¹, Yuzo Shinozuka¹ (1.Wakayama Univ.)

6:30 PM - 8:30 PM

[14p-PB12-7] Theoretical investigation of non-thermal equilibrium exciton dynamics based on hydrogen plasma model in GaN

〇Tomohiro Iwahori¹, Kazuma Takeuchi¹, Bei Ma¹, Ken Morita¹, Yoshihiro Ishitani¹ (1.Chiba Univ.)

6:30 PM - 8:30 PM

[14p-PB12-8] First-Principles Calculation of Adsorption of Ga₂O on GaN(0001) Surface

〇Takahiro Kawamura^1,2, Akira Kitamoto², Mamoru Imade², Masashi Yoshimura², Yusuke Mori², Yoshitada Morikawa² (1.Mie Univ., 2.Osaka Univ.)

6:30 PM - 8:30 PM

[14p-PB12-9] Transparent Bulk GaN Crystals Grown by High Temperature Na-flux method

〇Masatoshi Hayashi¹, Taro Sato¹, Takumi Yamada¹, Shogo Ogawa¹, Masayuki Imanishi¹, Kosuke Murakami¹, Daisuke Matsuo¹, Mihoko Maruyama¹, Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Osaka Univ.)

6:30 PM - 8:30 PM

[14p-PB12-10] Reduction of Residual Carbon on GaN Grown using MOHVPE

〇zheng ye¹, Zheng Sun¹, Manato Deki¹, Yoshio Honda¹, Hiroshi Amano^1,2 (1.Nagoya Univ., 2.A.R.C.)

6:30 PM - 8:30 PM

[14p-PB12-11] Growth of n-type AlGaN (Al > 0.5) at high rate using high-speed-flow MOCVD

〇Kazutada Ikenaga¹, Akira Mishima¹, Toshiya Tabuchi¹, Koh Matsumoto¹ (1.TNSC)

6:30 PM - 8:30 PM

[14p-PB12-12] Characterization of BGaN fabricated by MOVPE

〇(M2)kohei ueyama¹, Takumi Nakamura¹, Hidenori Mimura², Yoku Inoue¹, Toru Aoki², Takayuki Nakano¹ (1.Shizuoka Univ., 2.Shizuoka Inst.)

6:30 PM - 8:30 PM

[14p-PB12-13] Growth reaction in the chemical vapor deposition process of hexagonal boron nitride

〇Atsushi Masuda¹, Naoki Umehara², Takaki Shimizu¹, Tetsuya Kouno¹, Hiroko Kominami¹, Kazuhiko Hara^2,3 (1.Graduate school of Eng., Shizuoka Univ., 2.Graduate school of Sci. and Tech., Shizuoka Univ., 3.Res. Inst. of Electronics, Shizuoka Univ.)

6:30 PM - 8:30 PM

[14p-PB12-14] Initial Growth Stage of MOVPE InN Epitaxial Growth on Epitaxial Graphene Surfaces on 4H-SiC(0001) Substrate

〇yuki tomatsu¹, Yuma Doko¹, Daiki Ishimaru¹, Akihiro Hashimoto¹ (1.Fukui Univ.)

6:30 PM - 8:30 PM

[14p-PB12-15] AlN grown on epitaxial graphene by RF-MBE

〇takahiro yamazaki¹, Taiki Hata¹, Yusuke Yamane¹, Yoshiaki Sekine², Humihiko Maeda², Hiroki Hibino², Miki Fujita³, Toshiki Makimoto¹ (1.Waseda Univ., 2.NTT Basic Research Lab., 3.NIT, Ichinoseki Coll.)

6:30 PM - 8:30 PM

[14p-PB12-16] RF-MBE Growth of GaN on a Sapphire Substrate using an AlON Buffer Layer

〇taiki hata¹, Takahiro Yamazaki¹, Yusuke Yamane¹, Michiya Maeda¹, Kazuhide Kumakura², Hideki Yamamoto², Toshiki Makimoto¹ (1.Waseda Univ, 2.NTT BRL)

6:30 PM - 8:30 PM

[14p-PB12-17] Optimal RF-MBE Growth Condition of GaN on Sapphire Substrate Using 2-step Growth

〇Yusuke YAMANE¹, Taiki Hata¹, Takahiro Yamazaki¹, Michiya Maeda¹, Kazuhide Kumakura², Hideki Yamamoto², Toshiki Makimoto¹ (1.Waseda Univ., 2.NTT BRL.)

6:30 PM - 8:30 PM

[14p-PB12-18] In-situ X-ray reciprocal space mapping measurements
in GaInN growth on GaN by RF-MBE

〇(M1)Masataka Sawada¹, Tomohiro Yamaguchi¹, Takuo Sasaki², Kento Narutani¹, Ryota Deki³, Takeyoshi Onuma¹, Tohru Honda¹, Masamitsu Takahashi^2,3, Yasushi Nanishi⁴ (1.Kogakuin Univ., 2.JAEA., 3.Univ of Hyogo., 4.Ritsumeikan Univ.)

6:30 PM - 8:30 PM

[14p-PB12-19] Growth of single-domain cubic GaN and cubic InN dots on MgO (001) vicinal substrates

〇(M2)Kenichi Ishii¹, Misao Orihara¹, Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1.Saitama Univ.)

6:30 PM - 8:30 PM

[14p-PB12-20] InGaN nano-umbrella crystals grown by radio-frequency plasma-assisted molecular beam epitaxy

〇Tetsuya Kouno¹, Masaru Sakai², Katsumi Kishino³, Kazuhiko Hara¹ (1.Shizuoka univ., 2.Univ. of Yamanashi, 3.Sophia Univ.)

6:30 PM - 8:30 PM

[14p-PB12-21] Low angle incident micro channel epitaxy of a-plane GaN by MOMBE
--- Suppression of abnormal growth at mask edge ---

〇yasuhiro kusakabe¹, takahiro maruyama¹, shigeya naritsuka¹, kazuo shimizu², shougo kaneda² (1.Meijo Univ., 2.Shizuoka Univ.)

6:30 PM - 8:30 PM

[14p-PB12-22] GaN Microchannel Epitaxy using Mesa-shaped Substrate by Liquid Phase Electroepitaxy -Mesa Orientation Dependence-

Daisuke Kambayashi¹, 〇Muneki Iwakawa¹, Yosuke Mizuno¹, Yuko Shiraki¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

6:30 PM - 8:30 PM

[14p-PB12-23] Design of boat for convection-enhanced Liquid Phase Epitaxy of GaN using 3D printer

〇Muneki Iwakawa¹, Daisuke Kambayashi¹, Yosuke Mizuno¹, Yuko Shiraki¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

Oral presentation

[15a-1D-1~11] 15.4 III-V-group nitride crystals

Tue. Sep 15, 2015 8:45 AM - 11:45 AM 1D (141+142)

座長:小林康之(弘前大),太田実雄(東大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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8:45 AM - 9:00 AM

[15a-1D-1] Growth evolution of γ’-Fe₄N films grown on GaN(0001) and their interfacial structure

〇(M1)Masamitsu Kimura¹, Shigehiko Hasegawa¹ (1.ISIR)

9:00 AM - 9:15 AM

[15a-1D-2] Chemical bonding state analysis for BN films prepared by reactive plasma-assisted coating

〇Shigehiko Hasegawa¹, Masao Noma², Michiru Yamashita³, Koji Eriguchi⁴ (1.ISIR Osaka Univ., 2.SHINKO SEIKI, 3.Hyogo Pref. Inst. Technol., 4.Kyoto Univ.)

9:15 AM - 9:30 AM

[15a-1D-3] Ion irradiation effect on internal stress in single-crystal c-BN thin films

〇Kazuyuki Hirama¹, Yoshitaka Taniyasu¹, Shin-ichi Karimoto¹, Hideki Yamamoto¹, Kazuhide Kumakura¹ (1.NTT BRL)

9:30 AM - 9:45 AM

[15a-1D-4] Characterization of RF plasma nitridated α-(AlGa)₂O₃for AlGaN growth

〇Akira Buma¹, Masuda Nao¹, Araki Tsutomu¹, Oda Masaya², Hitora Toshimi² (1.Ritsumeikan Univ., 2.FLOSFIA)

9:45 AM - 10:00 AM

[15a-1D-5] Eu incorporation mechanism of Eu doped GaN grown by rf-MBE

〇hiroyuki tahara¹, hiroto sekiguchi¹, keisuke yamane¹, hiroshi okada^2,1, akihiro wakahara^1,2 (1.Toyohashi Univ. Tech., 2.EIIRIS)

10:00 AM - 10:15 AM

[15a-1D-6] Micro-Characterization of RF-MBE-grown InGaN using Conductive-AFM

〇Kazukiu Komura¹, Satoshi Usuda¹, Manato Aranami¹, Tutomu Araki¹, Yasushi Nanishi¹ (1.Ritsumeikan Univ.)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[15a-1D-7] Thin-film transistors based on group III nitrides

Takeki Itoh¹, 〇Atsushi Kobayashi¹, Kohei Ueno¹, Jitsuo Ohta¹, Hiroshi Fujioka^1,2 (1.The Univ. of Tokyo, 2.JST-ACCEL)

10:45 AM - 11:00 AM

▲ [15a-1D-8] Thin-film transistors based on InN grown on polymer sheets at room temperature

〇KheShin Lye¹, Takeki Itoh¹, Atsushi Kobayashi¹, Kohei Ueno¹, Jitsuo Ohta¹, Hiroshi Fujioka^1,2 (1.The Univ. of Tokyo, 2.JST-ACCEL)

11:00 AM - 11:15 AM

[15a-1D-9] Investigation of HfN buffer layers for GaN growth

〇Masayuki Shinozuka¹, Jitsuo Ohta¹, Kosuke Watahiki¹, Hyelyeon Kim¹, Kohei Ueno¹, Atsushi Kobayashi¹, Hiroshi Fujioka^1,2 (1.IIS, The Univ. of Tokyo, 2.JST-ACCEL)

11:15 AM - 11:30 AM

[15a-1D-10] Preparation of high crystalline GaN thin films using GaN sputtering target

〇MASAMI MESUDA¹, HIDETO KURAMOCHI¹, MITSUAKI SHIMIZU² (1.Tosoh, 2.AIST)

11:30 AM - 11:45 AM

[15a-1D-11] Growth of AlInN layer by UHV sputter epitaxy (II)

〇(M1)Keita Gomi¹, Takeshi Koda¹, Ai Mizuno¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

Oral presentation

[16a-1D-1~12] 15.4 III-V-group nitride crystals

Wed. Sep 16, 2015 8:45 AM - 12:00 PM 1D (141+142)

座長:小島一信(東北大),石谷善博(千葉大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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8:45 AM - 9:00 AM

[16a-1D-1] TEM evaluation on dislocation filtering effect of GaN nanocolumns on GaN/Si substrate

〇(PC)Shunsuke Ishizawa¹, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech.)

9:00 AM - 9:15 AM

[16a-1D-2] Emission property of flip-chip nanocolumn LED

〇Daishi Fukushima¹, Hiroaki Hayashi¹, Tomohiro Noma¹, Yuta Konno¹, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology)

9:15 AM - 9:30 AM

[16a-1D-3] Structural analyze for improving the electrical property of flip-chip nanocolumn LEDs

〇tomohiro noma¹, hiroaki hayashi¹, daishi fukushima¹, ichirou nomura¹, katsumi kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology)

9:30 AM - 9:45 AM

[16a-1D-4] Wide Area Nanotemplate Selective Area Growth of InGaN/GaN Regularly Nanocolumns on Nanoimprint-Patterned AlN/Si Substrates

〇Kouji Yamano¹, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech Research center)

9:45 AM - 10:00 AM

[16a-1D-5] Dislocation formation of r-plane slip initiating plastic deformation in nano-indentation on bulk GaN surface

〇Toshiya Yokogawa¹, Sachi Niki², Junko Maekawa², Masahiko Aoki² (1.Yamaguchi Univ., 2.Ion Tech. Ctr.)

10:00 AM - 10:15 AM

[16a-1D-6] Theoretical investigations for atomic arrangements around threading screw dislocation cores in nitride semiconductors

〇ryohei sakaguchi¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (1.Mie Univ.)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[16a-1D-7] [Young Scientist Presentation Award Speech] Emission linewidths of site-controlled GaN nanowire quantum dots
~The influence of spectral diffusion~

〇Mark HOLMES¹, Satoshi Kako², Choi Kihyun¹, Munetaka Arita¹, Yasuhiko Arakawa^1,2 (1.NanoQuine, 2.Univ. of Tokyo, IIS)

10:45 AM - 11:00 AM

[16a-1D-8] Evaluation of homogeneous and inhomogeneous linewidth broadening of single GaN interface-fluctuation quantum dots

〇Munetaka Arita¹, Satoshi Kako^1,2, Yasuhiko Arakawa^1,2 (1.NanoQuine, Univ. of Tokyo, 2.IIS, Univ. of Tokyo)

11:00 AM - 11:15 AM

[16a-1D-9] Optical property of InGaN/GaN single quantum disk nano-pillars fabricated by hydrogen environment anisotropic thermal etching (HEATE)

〇(M1)Tomoya Mizutani¹, Ryo Hachiya¹, Kohei Ogawa¹, Shun Ishijima¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Univ. Nano-Tech Research Ctr.)

11:15 AM - 11:30 AM

[16a-1D-10] Fabrication of LED based on regularly arranged thin InGaN nanocolumns

〇Tatsuya Kano¹, Jun Yoshida¹, Rin Miyagawa¹, Naoki Sakakibara¹, Yutaro Mizuno¹, Takao Oto¹, Katsumi Kishino^1,2 (1.Sophia Univ, 2.Sophia Univ. Nanotech. Res. Center)

11:30 AM - 11:45 AM

[16a-1D-11] Period dependence of emission mechanism in InGaN/GaN single quantum wells nanocolumns

〇(M1)Rin Miyagawa¹, Takao Oto¹, Yutaro Mizuno¹, Tatsuya Kano¹, Jun Yoshida¹, Naoki Sakakibara¹, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech. Res. Center)

11:45 AM - 12:00 PM

[16a-1D-12] Column diameter dependent carrier recombination mechanisms in regularly-arrayed InGaN/GaN nanocolumns

〇(PC)Takao Oto¹, Yutaro Mizuno¹, Rin Miyagawa¹, Tatsuya Kano¹, Jun Yoshida¹, Kazuhiro Ema^1,2, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech. Res. Center)

Oral presentation

[16p-1D-1~14] 15.4 III-V-group nitride crystals

Wed. Sep 16, 2015 1:15 PM - 5:00 PM 1D (141+142)

座長:山田陽一(山口大),上山智(名城大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[16p-1D-1] Localized Carrier Dynamics in Regularly-Arrayed InGaN/GaN Nanocolumns

〇Kazuya Kinjo¹, Yuta Inose¹, Naoki Shimosako¹, Hikaru Sato¹, Kazuhiro Ema^1,2, Takao Oto¹, Katsumi Kishino^1,2 (1.Sophia University, 2.Sophia Nanotechnology Research Center)

1:30 PM - 1:45 PM

[16p-1D-2] Optical Polarization Properties of Nonpolar InGaN films Measured by Photoluminescence Excitation Spectroscopy

〇(M2)RYOHEI MAEDA¹, SHIGETA SAKAI¹, ATSUSHI A. YAMAGUCHI¹, KAORI KURIHARA², SATORU NAGAO² (1.Kanazawa Inst. of Tech., 2.Mitsubishi Chemical Corp.)

1:45 PM - 2:00 PM

△ [16p-1D-3] Possible Origin of Double-Peak Emission in m-plane InGaN Quantum Wells

〇Shigeta Sakai¹, Atsushi Yamaguchi¹, Kaori Kurihara², Satoru Nagao² (1.Kanazawa Inst. of Tech., 2.Mitsubishi Chemical Corp.)

2:00 PM - 2:15 PM

[16p-1D-4] Study on Junction leakage Currents and Deep Levels in InGaN Solar Cells

〇Daichi Imai^1,2, Kazuhide Kusakabe^1,2, Ke Wang^1,2, Akihiko Yoshikawa^1,2,3 (1.SMART, Chiba Univ., 2.JST-ALCA, 3.Kogakuin Univ.)

2:15 PM - 2:30 PM

[16p-1D-5] Radiation dynamics of free and donor-bound excitons in high-quality bulk GaN

〇Kazunobu Kojima¹, Makoto Saito^1,2, Hirotaka Ikeda², Kenji Fujito², Shigefusa Chichibu¹ (1.Tohoku University, 2.Mitsubishi Chemical Corp.)

2:30 PM - 2:45 PM

[16p-1D-6] Investigation of stability of optical sites for Eu- and Mg-codoped GaN

〇Hiroki Tateishi¹, Hiroto Sekiguchi¹, Keisuke Yamane¹, Hiroshi Okada^2,1, Akihiro Wakahara^1,2 (1.Toyohashi Univ.Tech., 2.EIIRIS)

2:45 PM - 3:00 PM

[16p-1D-7] Growth of Eu doped GaN nanocolumns grown by rf-plasma-assisted molecular beam epitaxy

〇Satoshi Nishikawa¹, Sekiguchi Hiroto¹, Imanishi Tomohiko¹, Yamane Keisuke¹, Okada Hiroshi^2,1, Kishino Katsumi³, Wakahara Akihiro^1,2 (1.Toyohashi Univ.Tech., 2.EIIRIS, 3.Sophia Univ.)

Break （3:00 PM - 3:15 PM）

3:15 PM - 3:30 PM

[16p-1D-8] Phonon-carrier dynamics simulation of GaN material

〇Bei Ma¹, Kazuma Takeuchi¹, Tomohiro Iwahori¹, Hideto Miyake², Kazamasa Hiramatsu², Yoshihiro Ishitani¹ (1.Chiba Univ., 2.Mie Univ.)

3:30 PM - 3:45 PM

[16p-1D-9] Depth profile characteristic evaluation technique of electron in GaN films by infrared reflection spectra

〇Takaaki Kamijoh¹, Bei Ma¹, Ken Morita¹, Yoshihiro Ishitani¹ (1.Chiba Univ.)

3:45 PM - 4:00 PM

[16p-1D-10] Non-radiative recombination process in GaN substrates and heteroepitaxial films studied by transient lens method

〇(M2)Masahiro Tsukamoto¹, Ryota Ishii¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

4:00 PM - 4:15 PM

▲ [16p-1D-11] Growth and Optical Properties of AlN/AlGaN Heterostructures on Patterned Si Substrate

〇(P)Tinh Tran¹, Noritoshi Maeda¹, Masafumi Jo¹, Hideki Hirayama¹ (1.RIKEN)

4:15 PM - 4:30 PM

[16p-1D-12] Linewidth analysis of intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

〇Teruhisa Kotani^1,2,3, Munetaka Arita¹, Yasuhiko Arakawa^1,2 (1.Nano Quine, 2.IIS Univ. of Tokyo, 3.SHARP)

4:30 PM - 4:45 PM

[16p-1D-13] Improvement of the Efficiency of AlGaN-based Deep UV LED

〇Tetsuhiko Inazu¹, Noritaka Niwa¹, Hiroyasu Ichinokura², Cyril Pernot¹, Hideki Asano², Hidemasa Tomozawa¹, Hisanori Ishiguro², Yoshio Honda³, Hiroshi Amano³, Isamu Akasaki⁴ (1.Nikkiso Co., Ltd., 2.Nikkiso Giken Co., Ltd., 3.Nagoya Univ., 4.Meijo Univ.)

4:45 PM - 5:00 PM

[16p-1D-14] Well width dependence of biexciton binding energy in AlGaN-based quantum wells (2)

Katsuto Nakamura¹, Taira Izumi¹, Shumpei Fukuchi¹, Satoshi Kurai¹, Hideto Miyake², Kazumasa Hiramatsu², 〇Yoichi Yamada¹ (1.Yamaguchi Univ., 2.Mie Univ.)

Sessions

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13a-1D-1~11] 15.4 III-V-group nitride crystals

△ [13a-1D-5] Low Ohmic contact resistance V-based electrode for high AlN molar fraction n-type AlGaN

△ [13a-1D-8] Characterization of GaN epilayer on (0001) sapphire using THz ellipsometry

△ [13a-1D-9] Evaluation of m-plane GaN by using laser-induced THz emission

[13p-1D-1~26] 15.4 III-V-group nitride crystals

△ [13p-1D-1] The Effect of Oxygen Impurity on Lattice Constants in GaN Crystals Grown with the Na-Flux Method

△ [13p-1D-5] Effect of growth condition on growth rate of AlN grown from Ga-Al solution

△ [13p-1D-8] Characterization of Defect Distribution in Semipolar (20-21) GaN Thick Films by X-ray Microdiffraction

▲ [13p-1D-9] Evaluation of dislocations in HVPE GaN single crystal by KOH etching with Na2O2 additive and cathodoluminescence mapping

△ [13p-1D-11] Thick InGaN Layer Growth by Tri-Halide Vapor Phase Epitaxy

△ [13p-1D-18] Growth and optical properties of semi-polar AlN/AlGaN layers grown on m-plane sapphire substrates

△ [13p-1D-19] Study on the Growth of AlInN by Radical Enhanced Metal Organic Chemical Vapor Deposition

△ [13p-1D-20] Influence of constituents in ScAlMgO4 substrates on properties of GaN epitaxial layers

△ [13p-1D-23] Mechanism of Stress Control for GaN Growth on Si Using AlN Interlayers

[14a-1D-1~11] 15.4 III-V-group nitride crystals

△ [14a-1D-3] Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar (000\overline{1}) p-type GaN grown by MOVPE

△ [14a-1D-6] Enhancement of light output power of amber light-emitting diodes bystrain-compensated AlN/AlGaN barriers

△ [14a-1D-9] Growth of InGaN well layer with an in-situ monitoring system

△ [14a-1D-11] Carrier gas dependence of GaSb molar fraction in GaNSb

[14p-CE-1~4] 15.4 III-V-group nitride crystals

[14p-PB12-1~23] 15.4 III-V-group nitride crystals

[15a-1D-1~11] 15.4 III-V-group nitride crystals

▲ [15a-1D-8] Thin-film transistors based on InN grown on polymer sheets at room temperature

[16a-1D-1~12] 15.4 III-V-group nitride crystals

[16p-1D-1~14] 15.4 III-V-group nitride crystals

△ [16p-1D-3] Possible Origin of Double-Peak Emission in m-plane InGaN Quantum Wells

▲ [16p-1D-11] Growth and Optical Properties of AlN/AlGaN Heterostructures on Patterned Si Substrate

Authentication

▲ [13p-1D-9] Evaluation of dislocations in HVPE GaN single crystal by KOH etching with Na₂O₂ additive and cathodoluminescence mapping

△ [13p-1D-20] Influence of constituents in ScAlMgO₄ substrates on properties of GaN epitaxial layers

△ [14a-1D-6] Enhancement of light output power of amber light-emitting diodes by
strain-compensated AlN/AlGaN barriers