[14p-PB12-1~23] 15.4 III-V-group nitride crystals

[14p-PB12-11] Growth of n-type AlGaN (Al > 0.5) at high rate using high-speed-flow MOCVD

〇Kazutada Ikenaga¹, Akira Mishima¹, Toshiya Tabuchi¹, Koh Matsumoto¹ (1.TNSC)

Keywords:MOCVD,n-AlGaN,high rate

We report the carbon concentration and the electrical characteristics of Si-doped AlGaN(Al>0.5) at a high growth rate while keeping a relatively high V/III ratio.