[16p-1D-1~14] 15.4 III-V-group nitride crystals

[16p-1D-10] Non-radiative recombination process in GaN substrates and heteroepitaxial films studied by transient lens method

〇(M2)Masahiro Tsukamoto¹, Ryota Ishii¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

Keywords:nitride semiconductor,droop,transient lens