The 76th JSAP Autumn Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-1D-1~26] 15.4 III-V-group nitride crystals

Sun. Sep 13, 2015 1:15 PM - 8:15 PM 1D (141+142)

座長:斉藤 真(三菱化学),岡田 成仁(山口大),岩谷 素顕(名城大)

1:45 PM - 2:00 PM

[13p-1D-3] Characterization of Helical dislocations in ammonothermal GaN substrate

〇Kayo Horibuchi1, Satoshi Yamaguchi1, Yasuji Kimoto1, Koichi Nishikawa1, Tetsu Kachi1 (1.Toyota Central R&D Labs.)

Keywords:dislocation,GaN substrate