The 76th JSAP Autumn Meeting, 2015

Presentation information

Print

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-1D-1~26] 15.4 III-V-group nitride crystals

Sun. Sep 13, 2015 1:15 PM - 8:15 PM 1D (141+142)

座長:斉藤 真(三菱化学),岡田 成仁(山口大),岩谷 素顕(名城大)

4:00 PM - 4:15 PM

△ [13p-1D-11] Thick InGaN Layer Growth by Tri-Halide Vapor Phase Epitaxy

〇Takahide Hirasaki1, Misaki Meguro1, Quang Tu Thieu2, Hisashi Murakami1, Yoshinao Kumagai1, Bo Monemar2,3, Akinori Koukitu1 (1.Tokyo Univ. of A&T, 2.TUAT GIRO, 3.Linkoping Univ.)

Keywords:Nitride semiconductor,InGaN,HVPE