The 76th JSAP Autumn Meeting, 2015

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16a-1D-1~12] 15.4 III-V-group nitride crystals

Wed. Sep 16, 2015 8:45 AM - 12:00 PM 1D (141+142)

座長:小島 一信(東北大),石谷 善博(千葉大)

11:45 AM - 12:00 PM

[16a-1D-12] Column diameter dependent carrier recombination mechanisms in regularly-arrayed InGaN/GaN nanocolumns

〇(PC)Takao Oto1, Yutaro Mizuno1, Rin Miyagawa1, Tatsuya Kano1, Jun Yoshida1, Kazuhiro Ema1,2, Katsumi Kishino1,2 (1.Sophia Univ., 2.Sophia Nanotech. Res. Center)

Keywords:InGaN,nanocolumn,nanowire