Micro-Characterization of RF-MBE-grown InGaN using Conductive-AFM

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Tue. Sep 15, 2015 8:45 AM - 11:45 AM 1D (141+142)

座長:小林康之(弘前大),太田実雄(東大)

10:00 AM - 10:15 AM

〇Kazukiu Komura¹, Satoshi Usuda¹, Manato Aranami¹, Tutomu Araki¹, Yasushi Nanishi¹ (1.Ritsumeikan Univ.)

Keywords:InGaN,AFM