[14a-1D-1~11] 15.4 III-V-group nitride crystals

[14a-1D-7] InGaN/GaN MQW Growth on 200 mm Si Wafer by Fast Rotating Single-Wafer MOCVD

〇Yasushi Iyechika¹, Hideshi Takahashi¹, Yuusuke Sato¹ (1.Nuflare Technology)

Keywords:InGaN/GaN MQW,200 mm Si wafer,MOCVD

Effect of growth parameters on InGaN/GaN MQW period and average [In] grown on 200 mm Si wafer was investigated using single-wafer fast rotation MOCVD tool. Precise control of MQW period and average [In] can be achieved by tuning these parameters.