The 76th JSAP Autumn Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[14a-1D-1~11] 15.4 III-V-group nitride crystals

Mon. Sep 14, 2015 8:45 AM - 11:45 AM 1D (141+142)

座長:竹内 哲也(名城大),中野 貴之(静岡大)

11:00 AM - 11:15 AM

△ [14a-1D-9] Growth of InGaN well layer with an in-situ monitoring system

〇(M1)Tetsuya Yamamoto1, Akira Tamura1, Yoshio Honda1, Hiroshi Amano1,2 (1.Nagoya Univ., 2.ARC)

Keywords:InGaN,MOVPE,in-situ