The 76th JSAP Autumn Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16p-1D-1~14] 15.4 III-V-group nitride crystals

Wed. Sep 16, 2015 1:15 PM - 5:00 PM 1D (141+142)

座長:山田 陽一(山口大),上山 智(名城大)

4:45 PM - 5:00 PM

[16p-1D-14] Well width dependence of biexciton binding energy in AlGaN-based quantum wells (2)

Katsuto Nakamura1, Taira Izumi1, Shumpei Fukuchi1, Satoshi Kurai1, Hideto Miyake2, Kazumasa Hiramatsu2, 〇Yoichi Yamada1 (1.Yamaguchi Univ., 2.Mie Univ.)

Keywords:biexciton,quantum well,AlGaN