The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-1D-1~26] 15.4 III-V-group nitride crystals

Sun. Sep 13, 2015 1:15 PM - 8:15 PM 1D (141+142)

座長:斉藤 真(三菱化学),岡田 成仁(山口大),岩谷 素顕(名城大)

7:00 PM - 7:15 PM

[13p-1D-22] Verticality control of hetero-interface at GaN double polarity selective area growth using MOVPE

〇Noriyuki Osumi1, Kenta Kuze1, Yoku Inoue1, Takayuki Nakano1 (1.Sizuoka Univ.)

Keywords:MOVPE,polar,selective area growth