[15a-1D-1~11] 15.4 III-V-group nitride crystals

[15a-1D-1] Growth evolution of γ’-Fe₄N films grown on GaN(0001) and their interfacial structure

〇(M1)Masamitsu Kimura¹, Shigehiko Hasegawa¹ (1.ISIR)

Keywords:semiconductor,iron nitride,gallium nitride

For realization of semiconductor spintronic devices, it is necessary to achieve spin injection into semiconductors with high efficiency. γ’-Fe₄N is one of the most attractive electrode materials for spin injection because it has a half-metalic band structure. The spin injection/detection efficiency depends on structures of electrode/semiconductor interfaces. In this presentation, we will report on Fe nitride epitaxial growth on GaN(0001) by plasma-assisted molecular beam epitaxy (PA-MBE), especially focusing on structures of γ’-Fe₄N/GaN interfaces.