[14a-1D-1~11] 15.4 III-V-group nitride crystals

[14a-1D-1] Low-temperature (~400 deg. C) growth of InN-based materials by NH₃ decomposition catalyst-assisted MOVPE (I): InN growth

〇Akio Yamamoto^1,2, Kazuki Kodama^1,2, Naoteru Shigekawa³, Takashi Matsuoka⁴, Masaaki Kuzuhara¹ (1.Univ. of Fukui, 2.JST-CREST, 3.Osaka City Univ., 4.Tohoku Univ.)

Keywords:InN,MOVPE,ammonia decomposition catalyst

The MOVPE growth of InN using a pellet-type NH₃ decomposition catalyst has been investigated. By using this method, a single-crystalline wurtzite InN is grown even at 400 deg. C and migration of growing InN is markedly enhanced at around 500 deg. C. These results strongly suggest that this method is hopeful for the high-quality InN growth.