The 76th JSAP Autumn Meeting, 2015

Presentation information

Print

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[14a-1D-1~11] 15.4 III-V-group nitride crystals

Mon. Sep 14, 2015 8:45 AM - 11:45 AM 1D (141+142)

座長:竹内 哲也(名城大),中野 貴之(静岡大)

9:30 AM - 9:45 AM

[14a-1D-4] Growth of High-Indium-Content InGaN on semipolar (1–101) GaN Stripe Crystals

〇Maki Kushimoto1, Yoshio Honda1, Hiroshi Amano1,2 (1.Nagoya Univ., 2.Akasaki Research Center)

Keywords:InGaN,semipolar,High Indium