[14p-PB12-1~23] 15.4 III-V-group nitride crystals

[14p-PB12-21] Low angle incident micro channel epitaxy of a-plane GaN by MOMBE
--- Suppression of abnormal growth at mask edge ---

〇yasuhiro kusakabe¹, takahiro maruyama¹, shigeya naritsuka¹, kazuo shimizu², shougo kaneda² (1.Meijo Univ., 2.Shizuoka Univ.)

Keywords:Metalorganic Molecular Beam Epitaxy,GaN,Low angle incident micro channel epitaxy