The 76th JSAP Autumn Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13a-1D-1~11] 15.4 III-V-group nitride crystals

Sun. Sep 13, 2015 8:45 AM - 11:45 AM 1D (141+142)

座長:平山 秀樹(理研),長谷川 繁彦(阪大)

9:30 AM - 9:45 AM

[13a-1D-4] Improved GaN/AlN Interface Abruptness and Enhanced Photoelectrochemical Properties by Optimizing the Growth Conditions Transition

〇Akihiro Nakamura1, Michihiro Suzuki1, Katsushi Fujii2, Masakazu Sugiyama1, Yoshiaki Nakano1 (1.Tokyo Univ., 2.GS+I)

Keywords:GaN,polarization,photoelectrochemistry

GaNからAlNへの成長条件遷移過程を最適化することで, GaN/AlN界面の急峻性向上及びGaN/AlN/GaN光電極の特性向上に成功したので報告する.