[13a-1D-1~11] 15.4 III-V-group nitride crystals

[13a-1D-7] Characterization of Electrical Properties in AlGaN/GaN Recessed TLM Device Structures

〇Narihiko Maeda¹, Masanobu Hiroki², Satoshi Sasaki² (1.Tokyo Univ. of Tech., 2.NTT Basic Res. Labs.)

Keywords:semiconductor,GaN,Heterostructure

AlGaN/GaN recessed TLM devices were fabricated, and the effect of AlGaN recessing on the electrical properties in TLM devices were examined. An interesting result was obtained that the contact resistance increased in recessed TLM devices, although the layer structures beneath the ohmic metals were maintained.