The 76th JSAP Autumn Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13a-1D-1~11] 15.4 III-V-group nitride crystals

Sun. Sep 13, 2015 8:45 AM - 11:45 AM 1D (141+142)

座長:平山 秀樹(理研),長谷川 繁彦(阪大)

10:45 AM - 11:00 AM

△ [13a-1D-8] Characterization of GaN epilayer on (0001) sapphire using THz ellipsometry

〇KOHEI TACHI1, TAKASHI FUJII1,3, TSUTOMU ARAKI1, YASUSHI NANISHI1, TAKESHI NAGASHIMA2, TOSHIYUKI IWAMOTO3, YUKINORI SATO3, NAOTAKE MORITA4, RYUICHI SUGIE4, SATOSHI KAMIYAMA5 (1.Ritsumeikan Univ., 2.Setsunan Univ., 3.PNP., 4.TRC., 5.Meijo Univ.)

Keywords:terahertz,ellipsometry,nitride semiconductor