[13p-1C-1~15] 13.4 Si wafer processing /MEMS/Integration technology

[13p-1C-5] Half-Inch Silicon CVD Reactor Using Concentrated Infrared Light Heater (5)

〇NING LI¹, HITOSHI HABUKA¹, TAKANORI MIKAHARA², SHIN-ICHI IKEDA^2,3, YUUKI ISHIDA^2,3, SHIRO HARA^2,3 (1.Yokohama National Univ., 2.MINIMAL, 3.AIST)

Keywords:epitaxial growth

To develop a method for obtaining the uniform-thick silicon epitaxial film using the CVD reactor for minimal manufacturing with the new reflector, we studied the effect of a substrate rotation and a SiC susceptor. Because these methods suppressed the distribution of the substrate temperature, the film thickness tended to be symmetrical and uniform.