[13p-1D-1~26] 15.4 III-V-group nitride crystals

△ [13p-1D-18] Growth and optical properties of semi-polar AlN/AlGaN layers grown on m-plane sapphire substrates

〇Issei Oshima^1,2, Masafumi Jo¹, Noritoshi Maeda¹, Norihiko Kamata², Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ.)

Keywords:Semipolar,AlN template,AlGaN

Non-polar or semi-polar AlGaN heterostructures are attracting much attention in order to obtain a high internal quantum efficiency (IQE) in deep-ultraviolet light emitting diodes (DUV-LEDs).We obtained a smooth surface of a semipolar AlN grown layer on a m-plane sapphire grown at high growth temperature (~1500°C).We found that the growth of (1-103) or (11-22) AlN crystal on m-plane sapphire can be distinguished by changing the V/III ratio during the AlN growth. We also grew a semi-polar AlGaN layer on a semi-polar AlN and obtained 267 nm DUV photoluminescence (PL) at room temperature.