[13p-1D-1~26] 15.4 III-V-group nitride crystals

△ [13p-1D-20] Influence of constituents in ScAlMgO₄ substrates on properties of GaN epitaxial layers

〇(D)Takuya Ozaki¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

Keywords:ScAlMgO4,GaN

ScAlMgO₄(SCAM) is an attractive substrate material for the growth of nitride semiconductors because it has smaller lattice and thermal expansion mismatch with GaN than sapphire. In order to further improve the performance of devices on SCAM substrates, we investigate the influence of constituents in SCAM substrates on properties of GaN epitaxial layers. Assessing optical properties of undoped and Mg-doped GaN, we revealed that Mg element in SCAM substrates contributes to higher Mg concentration in GaN on SCAM than that on saphire.