The 76th JSAP Autumn Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-1D-1~26] 15.4 III-V-group nitride crystals

Sun. Sep 13, 2015 1:15 PM - 8:15 PM 1D (141+142)

座長:斉藤 真(三菱化学),岡田 成仁(山口大),岩谷 素顕(名城大)

6:45 PM - 7:00 PM

[13p-1D-21] Atomic layer epitaxy of GaN-based thin-film

〇Yoshihiro Kato1, Koji Neishi1, Song Yun Kang1, Ayuta Suzuki1, Yoshio Honda2, Hiroshi Amano2 (1.Tokyo Electron Ltd., 2.Nagoya Univ.)

Keywords:Nitride semiconductor,Atomic Layer Epitaxy,LED