[13p-1D-1~26] 15.4 III-V-group nitride crystals

[13p-1D-4] Evaluation of Crystal Defects in GaN by X-ray topography

〇Katsuhiko Nakai¹, Tetsuya Nagai¹, Kengo Noami¹, Masayuki Sasaki¹, Toshiro Futagi¹ (1.NSST)

Keywords:X-ray topography,GaN,Dislocation

Crystal defects in GaN crystals were evaluated by X-ray topography, selective etching and TEM. We found that X-ray topography is available to evaluate dislocations of a GaN crystal with the dislocation density in the order of 1E4/cm² because X-ray anomalous transmission (the Borrmann effect) becomes effective as dislocation density decreases.