The 76th JSAP Autumn Meeting, 2015

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Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[13p-2H-1~21] 6.3 Oxide electronics

Sun. Sep 13, 2015 1:45 PM - 7:15 PM 2H (222)

座長:矢嶋 赳彬(東大),藤原 宏平(東北大)

5:30 PM - 5:45 PM

△ [13p-2H-15] Phase transition behavior of BaTiO3 film grown on orthorhombic GdScO3 substrate

〇Shunsuke Kobayashi1, Takeharu Kato1, Tsukasa Hirayama1, Yuichi Ikuhara1,2, Takahisa Yamamoto1,3 (1.JFCC, 2.Univ. Tokyo, 3.Nagoya Univ.)

Keywords:BaTiO3,strain,STEM