[13p-2M-1~14] New approach to the next-generation device using multinary compounds -- novel fields of solar cells, thermoelectric materials, magnetic-dielectric materials --

[13p-2M-5] Recent progress of thin film solar cells based on Cu₂SnS₃ and related materials

〇Hideaki Araki¹, Ayaka Kanai¹, Hinako Ebe¹, Kazuo Jimbo¹, Hironori Katagiri^1,2 (1.NIT Nagaoka, 2.JST-CREST)

Keywords:Cu2SnS3,Solar cells,Thin films

Cu₂SnS₃ (CTS) is composed of elements that are inexpensive, non-toxic and abundant in the Earth's crust. It is a p-type semiconductor with a band gap energy of 0.9~1.0 eV and an absorption coefficient of the order of 10⁴ cm^-1. In the present study, CTS thin film solar cells were fabricated using a method involving co-evaporation and annealing in the presence of sulfur. In order to fabricate photovoltaic (PV) cells with the structure SLG/Mo/CTS/CdS/ZnO:Al/Al, CTS thin films were deposited on SLG/Mo substrates. A PV cell comprising a CTS thin film exhibited a PCE of 4.29%. Recent progress of thin film solar cells based on Cu₂SnS₃ and related materials will be discussed.