[13p-2M-1~14] New approach to the next-generation device using multinary compounds -- novel fields of solar cells, thermoelectric materials, magnetic-dielectric materials --

[13p-2M-6] CZTS photovoltaic cell with η=9.4% using post high temperature annealing after CdS buffer layer deposition

〇Shin Tajima¹, Mitsutaro Umehara¹, Takahiro Mise¹, Masaki Hasegawa¹, Tadayoshi Itoh¹ (1.Toyota CRDL)

Keywords:CZTS,photovoltaic,CdS

In order to improve the photovoltaic properties of CZTS cells, we investigated the effect of the thickness of the CdS buffer layer and the annealing conditions after CdS deposition on the properties of CZTS cells. Consequently, we fabricated the high performance CZTS cells with η = 9.4 %.