The 76th JSAP Autumn Meeting, 2015

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Symposium » New approach to the next-generation device using multinary compounds -- novel fields of solar cells, thermoelectric materials, magnetic-dielectric materials --

[13p-2M-1~14] New approach to the next-generation device using multinary compounds -- novel fields of solar cells, thermoelectric materials, magnetic-dielectric materials --

Sun. Sep 13, 2015 1:15 PM - 6:30 PM 2M (224-1(South))

座長:杉山 睦(東京理科大),米田 稔(岡山理科大)

3:30 PM - 3:45 PM

△ [13p-2M-7] Bandgap tuning of ZnSnP2 through the order-disorder transition

〇(D)Shigeru NAKATSUKA1, Yoshitaro NOSE1, Yasuharu SHIRAI1 (1.Kyoto Univ.)

Keywords:compound semiconductor,order-disorder transition,bandgap engineering