The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[13p-2W-1~16] 15.5 Group IV crystals and alloys

Sun. Sep 13, 2015 1:15 PM - 5:30 PM 2W (234-2(North))

座長:黒澤 昌志(名大),都甲 薫(筑波大)

5:15 PM - 5:30 PM

[13p-2W-16] Effects of in-situ Sb-Doping on Crystalline and Electrical Characteristics of Ge1-xSnx Epitaxial Layer

〇(M1)Jihee Jeon1, Takanori Asano1,2, Wakana Takeuchi1, Masashi Kurosawa1,3, Mitsuo Sakashita1, Osamu Nakatsuka1, Shigeaki Zaima1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow, 3.EcoTopia Sci. Inst., Nagoya Univ.))

Keywords:GeSn,N type doping