Oral presentation

[13a-2W-1~9] 15.5 Group IV crystals and alloys

Sun. Sep 13, 2015 9:30 AM - 11:45 AM 2W (234-2(North))

座長:澤野憲太郎(東京都市大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:30 AM - 9:45 AM

[13a-2W-1] Solid Phase Crystallization of Germanium Films on Crystal Silicon and Silicon Dioxide (Ⅱ)

〇Kyota Kuroiwa¹, Tetsuya Kaneko¹, Masao Isomura¹ (1.Tokai Univ.)

9:45 AM - 10:00 AM

[13a-2W-2] Formation of position-controlled pseudo-single crystal Ge on insulator by local gold-induced layer-exchange crystallization(<300℃)

〇(M1)rikuta aoki¹, Jong-hyeok Park^1,2, Masanobu Miyao¹, Taizoh Sadoh¹ (1.ISEE, Kyushu Univ., 2.JSPS Research Fellow)

10:00 AM - 10:15 AM

[13a-2W-3] Annealing temperature dependent Au induced crystallization of a-Ge/Au/SiO2 structure

〇(B)kohei kudo¹, tatsushi nomitsu¹, ryosuke mochii¹, hayato okamoto¹, kenichiro takakura¹, isao tsunoda¹ (1.National Institute of Technology , Kumamoto)

10:15 AM - 10:30 AM

[13a-2W-4] Formation of large-grained Si_0.5Ge_0.5 (111) on insulators by Al-induced crystallization

〇Mitsuki Nakata¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

10:30 AM - 10:45 AM

[13a-2W-5] The influence of a-Si layer thickness on growth mechanism of poly-Si crystalline
grown by aluminum-induced-crystallization

〇Yasuhiro Sujihara¹, Sergii Tutashkonko², Isao Takahashi¹, Noritaka Usami¹ (1.Nagoya Univ., 2.JST-PV innov.)

10:45 AM - 11:00 AM

[13a-2W-6] Non-thermal equilibrium crystallization of amorphous GeSn on insulator
by pulsed laser annealing

〇(M1)Kenta Moto¹, Ryo Matsumura^1,2, Taizo Sadoh¹, Hiroshi Ikenoue¹, Masanobu Miyao¹ (1.ISEE, Kyushu Univ., 2.JSPS Research Fellow)

11:00 AM - 11:15 AM

[13a-2W-7] Sn passivation effects on polycrystalline Ge thin films on glass

〇Naoki Oya¹, Kaoru Toko¹, Mitsuki Nakata¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

11:15 AM - 11:30 AM

△ [13a-2W-8] Fabrication of single crystalline GeSn wire on quartz substrate by lateral liquid phase growth and its optical characterization

〇(M2)takashi amamoto¹, kouhei tominaga¹, shougo tanaka¹, takuji hosoi¹, takayoshi shimura¹, heiji watanabe¹ (1.Osaka Univ.)

11:30 AM - 11:45 AM

△ [13a-2W-9] Effect of underlying insulating films on mobility of GeSn polycrystalline films

〇Isao Yoshikawa¹, Kurosawa Masashi^1,2, Takeuchi Wakana¹, Sakashita Mitsuo¹, Nakatsuka Osamu¹, Zaima Shigeaki^1,2 (1.Graduate School of Engineering-Nagoya Univ., 2.EcoTopia Science Institute-Nagoya Univ.)

Oral presentation

[13p-2W-1~16] 15.5 Group IV crystals and alloys

Sun. Sep 13, 2015 1:15 PM - 5:30 PM 2W (234-2(North))

座長:黒澤昌志(名大),都甲薫(筑波大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

1:15 PM - 1:30 PM

[13p-2W-1] Effect of Ge growth temperature and growth rate on Ge dots formation using surface reconstruction through Si-C binding

〇Yuhki Satoh¹, Yuhki Itoh¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ.)

1:30 PM - 1:45 PM

[13p-2W-2] Influence of Si-C/Ge-C bonds on Ge dot formation

〇(D)Yuhki Itoh¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ.)

1:45 PM - 2:00 PM

[13p-2W-3] Growth of Ge(111) thin films on c-face sapphire substrate

〇(M1)Yamato Kawaguchi¹, Yuhki Itoh¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ.)

2:00 PM - 2:15 PM

[13p-2W-4] Effects of ion implantation on strain relaxation of SiGe films on Si(110) substrates

〇Madoka Kato¹, Taiyo Murakami², Keisuke Arimoto², Junji Yamanaka², Kiyokazu Nakagawa², Kentaro Sawano¹ (1.Tokyo City Univ., 2.Univ. of Yamanashi)

2:15 PM - 2:30 PM

[13p-2W-5] Thermal stability of compressively strained Si/Si_1-xC_x heterostructures formed with the defect control by ion implantation

〇You Arisawa¹, Yusuke Hoshi¹, Keisuke Arimoto², Junji Yamanaka², Kiyokazu Nakagawa², Kentarou Sawano³, Noritaka Usami¹ (1.Nagoya Univ., 2.Univ. of Yamanashi, 3.Tokyo City Univ.)

2:30 PM - 2:45 PM

[13p-2W-6] Delta-Doped Phosphorus on Germanium Studied by 3D Atom Probe

〇Yasuo Shimizu¹, Michihiro Yamada², Bin Han¹, Yuan Tu¹, Kentarou Sawano³, Masashi Uematsu², Kohei M. Itoh², Koji Inoue¹, Yasuyoshi Nagai¹ (1.IMR Tohoku Univ., 2.Keio Univ., 3.Tokyo City Univ.)

2:45 PM - 3:00 PM

[13p-2W-7] Improving Crystallinity of Ge layers on Si by Optimizing the Growth Temperature

〇Katsuya Oda¹, Tadashi Okumura¹, Satoshi Kako², Satoshi Iwamoto², Yasuhiko Arakawa² (1.Hitachi R&D, 2.Univ. of Tokyo)

Break （3:00 PM - 3:15 PM）

3:15 PM - 3:30 PM

[13p-2W-8] Selective Growth of Ge Thin Films by using Metal Organic Chemical Vapor Deposition

〇Tomoya Washizu¹, Yuki Inuzuka¹, Takanori Asano^1,2, Shinichi Ike^1,2, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,3 (1.Grad. Sc. of Eng., Nagoya Univ., 2.JSPS Research Fellow, 3.ESI, Nagoya Univ.)

3:30 PM - 3:45 PM

△ [13p-2W-9] Influence of Precursor Gas Source on Defect Properties in Si_1-xGe_x Epitaxial Thin Films

〇Shinichi IKE^1,2,3, Eddy Simoen³, Yosuke Shimura^3,4,5, Andriy Hikavyy³, Wilfried Vandervorst^3,4, Roger Loo³, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,6 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow, 3.Imec, 4.KU Leuven, 5.FWO PMC Fellow, 6.ESI, Nagoya Univ.)

3:45 PM - 4:00 PM

△ [13p-2W-10] Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD (3)

〇Kohei Suda¹, Seiya Ishihara¹, Naomi Sawamoto¹, Hideaki Machida², Masato Ishikawa², Hiroshi Sudoh², Yoshio Ohshita³, Koji Usuda⁴, Ichiro Hirosawa⁵, Atsushi Ogura¹ (1.Meiji Univ., 2.Gas-phase Growth, 3.Toyota Technological Inst., 4.Toshiba Corporation, 5.Japan Synchrotron Radiation Research Inst.)

4:00 PM - 4:15 PM

△ [13p-2W-11] Evaluation of Stress in Thin Film Ge_1-xSn_x on Ge Substrate by Oil-Immersion Raman Spectroscopy

〇Kazuma Takeuchi¹, Shotaro Yamamoto¹, Ryo Yokogawa¹, Naomi Sawamoto¹, Kohei Suda¹, Seiya Ishihara¹, Atsushi Ogura¹ (1.Meiji Univ.)

4:15 PM - 4:30 PM

[13p-2W-12] Formation and Characterization of Si_1-x-ySn_xC_y Polycrystalline Thin Films by using Solid Phase Crystallization

〇Shota Yano¹, Takashi Yamaha^1,2, Masashi Kurosawa^1,3, Wakana Takeuchi¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow, 3.EcoTopia Sci. Inst., Nagoya Univ.)

4:30 PM - 4:45 PM

[13p-2W-13] Epitaxial growth and characterization of Si_1-x-ySn_xC_y ternary alloy thin films

〇Takashi Yamaha^1,2, Shota Yano¹, Kouta Takahashi¹, Masashi Kurosawa^1,3, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow., 3.EcoTopia Sci. Inst., Nagoya Univ.)

4:45 PM - 5:00 PM

[13p-2W-14] Effect of Sn Contents on Solid-Phase Epitaxy of Si_1-xSn_x Thin Films

〇(M2)Motohiro Kato¹, Masashi Kurosawa^1,2,3, Osamu Nakatsuka¹, Shigeaki Zaima^1,2 (1.Grad. Sch. of Eng., Nagoya Univ., 2.EcoTopia Sci. Inst., Nagoya Univ., 3.Inst. Adv. Res., Nagoya Univ.)

5:00 PM - 5:15 PM

[13p-2W-15] Formation and Crystallinity Characterization of Ge_1-x-ySi_xSn_y/Ge_1-xSn_x/Ge_1-x-ySi_xSn_y Double-Heterojunction

〇Masahiro Fukuda¹, Takashi Yamaha^1,2, Takanori Asano^1,2, Syunsuke Fujinami¹, Masahi Kurosawa^1,3, Osamu Nakatsuka¹, Shigeaki Zaima^1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow, 3.ESI, Nagoya Univ.)

5:15 PM - 5:30 PM

▲ [13p-2W-16] Effects of in-situ Sb-Doping on Crystalline and Electrical Characteristics of Ge_1-xSn_x Epitaxial Layer

〇(M1)Jihee Jeon¹, Takanori Asano^1,2, Wakana Takeuchi¹, Masashi Kurosawa^1,3, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow, 3.EcoTopia Sci. Inst., Nagoya Univ.))

Poster presentation

[14a-PB6-1~7] 15.5 Group IV crystals and alloys

Mon. Sep 14, 2015 9:30 AM - 11:30 AM PB6 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:30 AM - 11:30 AM

[14a-PB6-1] Depth characterization of chemical states in GeSn thin film by HAXPES

〇Koji Usuda¹, Takaishi Riichiro¹, Yoshiki Masahiko¹, Suda Kohei², Ogura Atsushi², Tomita Mitsuhiro¹ (1.Toshiba Corp., 2.Meiji Univ.)

9:30 AM - 11:30 AM

[14a-PB6-2] Influence of Sn Content on Defect Formation in Ge_1−xSn_x Epitaxial Layers

〇Takanori Asano^1,2, Shigehisa Shibayama^1,2, Wakana Takeuchi¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,3 (1.Nagoya Univ., 2.JSPS, 3.ESI, Nagoya Univ.)

9:30 AM - 11:30 AM

[14a-PB6-3] Poly-crystallization of electrodeposited Ge film by Cu-induced crystallization II -Deposition condition dependence-

〇Yasutaka Uchida¹, Tomoko Funayama¹, Yoshiaki Kogure¹, Wenchang Yeh² (1.Teikyo Univ., 2.Shimane Univ.)

9:30 AM - 11:30 AM

▲ [14a-PB6-4] Solid Phase Epitaxy of Si Film on poly-Si Seed Layer formed by Aluminum-induced Crystallization

〇(M2)Joko Suwardy^1,2, Wipakorn Jevasuwan¹, Kaoru Toko², Takashi Suemasu², Naoki Fukata^1,2 (1.NIMS, 2.Univ. of Tsukuba)

9:30 AM - 11:30 AM

[14a-PB6-5] STM observation of Ge on Au(111) surface

〇YOSUKE WAKABAYASHI¹, Kouhei Hashiguchi¹, Masao Kamiko², Kentaro Kyuno^1,3 (1.Shibaura Inst. of Tech., 2.Inst. of Industrial Sci., Univ. of Tokyo, 3.RCGI, SIT)

9:30 AM - 11:30 AM

[14a-PB6-6] Effect of Ge thickness on the crystallization of Ge thin films by Co-Sputtering of Au and Ge

〇satoshi yamamoto¹, takatoshi sugiyama¹, masao kamiko², kentaro kyuno^1,3 (1.shibaura Inst. of tech., 2.Inst. of Industrial Sci., 3.SIT RCGI)

9:30 AM - 11:30 AM

[14a-PB6-7] Fabrication of crystalline Ge thin films by cosputtering of Au and Ge: Effect of phosphorus doping

〇(M1)Tatuya Suzuki¹, Satoshi Takatorige¹, Takatoshi Sugiyama¹, Kimio Kamiko², Kentaro Kyuno^1,3 (1.Shibaura Inst. of Tech., 2.Inst. of Industrial Sci. ,Univ. of Tokyo, 3.RCGI, SIT)

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[13a-2W-1~9] 15.5 Group IV crystals and alloys

[13a-2W-1] Solid Phase Crystallization of Germanium Films on Crystal Silicon and Silicon Dioxide (Ⅱ)

[13a-2W-2] Formation of position-controlled pseudo-single crystal Ge on insulator by local gold-induced layer-exchange crystallization(<300℃)

[13a-2W-3] Annealing temperature dependent Au induced crystallization of a-Ge/Au/SiO2 structure

[13a-2W-4] Formation of large-grained Si_0.5Ge_0.5 (111) on insulators by Al-induced crystallization

[13a-2W-5] The influence of a-Si layer thickness on growth mechanism of poly-Si crystalline
grown by aluminum-induced-crystallization

[13a-2W-6] Non-thermal equilibrium crystallization of amorphous GeSn on insulator
by pulsed laser annealing

[13a-2W-7] Sn passivation effects on polycrystalline Ge thin films on glass

△ [13a-2W-8] Fabrication of single crystalline GeSn wire on quartz substrate by lateral liquid phase growth and its optical characterization

△ [13a-2W-9] Effect of underlying insulating films on mobility of GeSn polycrystalline films

[13p-2W-1~16] 15.5 Group IV crystals and alloys

[13p-2W-1] Effect of Ge growth temperature and growth rate on Ge dots formation using surface reconstruction through Si-C binding

[13p-2W-2] Influence of Si-C/Ge-C bonds on Ge dot formation

[13p-2W-3] Growth of Ge(111) thin films on c-face sapphire substrate

[13p-2W-4] Effects of ion implantation on strain relaxation of SiGe films on Si(110) substrates

[13p-2W-5] Thermal stability of compressively strained Si/Si_1-xC_x heterostructures formed with the defect control by ion implantation

[13p-2W-6] Delta-Doped Phosphorus on Germanium Studied by 3D Atom Probe

[13p-2W-7] Improving Crystallinity of Ge layers on Si by Optimizing the Growth Temperature

[13p-2W-8] Selective Growth of Ge Thin Films by using Metal Organic Chemical Vapor Deposition

△ [13p-2W-9] Influence of Precursor Gas Source on Defect Properties in Si_1-xGe_x Epitaxial Thin Films

△ [13p-2W-10] Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD (3)

△ [13p-2W-11] Evaluation of Stress in Thin Film Ge_1-xSn_x on Ge Substrate by Oil-Immersion Raman Spectroscopy

[13p-2W-12] Formation and Characterization of Si_1-x-ySn_xC_y Polycrystalline Thin Films by using Solid Phase Crystallization

[13p-2W-13] Epitaxial growth and characterization of Si_1-x-ySn_xC_y ternary alloy thin films

[13p-2W-14] Effect of Sn Contents on Solid-Phase Epitaxy of Si_1-xSn_x Thin Films

[13p-2W-15] Formation and Crystallinity Characterization of Ge_1-x-ySi_xSn_y/Ge_1-xSn_x/Ge_1-x-ySi_xSn_y Double-Heterojunction

▲ [13p-2W-16] Effects of in-situ Sb-Doping on Crystalline and Electrical Characteristics of Ge_1-xSn_x Epitaxial Layer

[14a-PB6-1~7] 15.5 Group IV crystals and alloys

[14a-PB6-1] Depth characterization of chemical states in GeSn thin film by HAXPES

[14a-PB6-2] Influence of Sn Content on Defect Formation in Ge_1−xSn_x Epitaxial Layers

[14a-PB6-3] Poly-crystallization of electrodeposited Ge film by Cu-induced crystallization II -Deposition condition dependence-

▲ [14a-PB6-4] Solid Phase Epitaxy of Si Film on poly-Si Seed Layer formed by Aluminum-induced Crystallization

[14a-PB6-5] STM observation of Ge on Au(111) surface

[14a-PB6-6] Effect of Ge thickness on the crystallization of Ge thin films by Co-Sputtering of Au and Ge

[14a-PB6-7] Fabrication of crystalline Ge thin films by cosputtering of Au and Ge: Effect of phosphorus doping

Authentication

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[13a-2W-1~9] 15.5 Group IV crystals and alloys

△ [13a-2W-8] Fabrication of single crystalline GeSn wire on quartz substrate by lateral liquid phase growth and its optical characterization

△ [13a-2W-9] Effect of underlying insulating films on mobility of GeSn polycrystalline films

[13p-2W-1~16] 15.5 Group IV crystals and alloys

△ [13p-2W-9] Influence of Precursor Gas Source on Defect Properties in Si1-xGex Epitaxial Thin Films

△ [13p-2W-10] Ge1-xSnx Epitaxial Growth on Ge Substrate by MOCVD (3)

△ [13p-2W-11] Evaluation of Stress in Thin Film Ge1-xSnx on Ge Substrate by Oil-Immersion Raman Spectroscopy

▲ [13p-2W-16] Effects of in-situ Sb-Doping on Crystalline and Electrical Characteristics of Ge1-xSnx Epitaxial Layer

[14a-PB6-1~7] 15.5 Group IV crystals and alloys

▲ [14a-PB6-4] Solid Phase Epitaxy of Si Film on poly-Si Seed Layer formed by Aluminum-induced Crystallization

Authentication

△ [13p-2W-9] Influence of Precursor Gas Source on Defect Properties in Si_1-xGe_x Epitaxial Thin Films

△ [13p-2W-10] Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD (3)

△ [13p-2W-11] Evaluation of Stress in Thin Film Ge_1-xSn_x on Ge Substrate by Oil-Immersion Raman Spectroscopy

▲ [13p-2W-16] Effects of in-situ Sb-Doping on Crystalline and Electrical Characteristics of Ge_1-xSn_x Epitaxial Layer