The 76th JSAP Autumn Meeting, 2015

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Poster presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[14a-PB6-1~7] 15.5 Group IV crystals and alloys

Mon. Sep 14, 2015 9:30 AM - 11:30 AM PB6 (Shirotori Hall)

9:30 AM - 11:30 AM

[14a-PB6-2] Influence of Sn Content on Defect Formation in Ge1−xSnx Epitaxial Layers

〇Takanori Asano1,2, Shigehisa Shibayama1,2, Wakana Takeuchi1, Mitsuo Sakashita1, Osamu Nakatsuka1, Shigeaki Zaima1,3 (1.Nagoya Univ., 2.JSPS, 3.ESI, Nagoya Univ.)

Keywords:Epitaxial growth,Germanium Tin,Defect