[13p-4C-1~9] Ge-CMOSはどこまで進んでいるのか

▲ [13p-4C-6] Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs

〇(D)Xiao YU^1,2, Jian Kang^1,2, Rui Zhang¹, Wei.-Li Cai^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.the Univ. of Tokyo, 2.JST-CREST)

キーワード：GeOI,mobility,Ge

Electrical properties of ultrathin-body GeOI MOSFETs with different Ge/BOX back interfaces have been evaluated in order to study the impact of back interface passivation on the electrical properties. It is found that the influence of back interface quality is more critical than the GeOI crystalline quality in the mobility. The GeOI thickness dependence of the interfacial quality as well as the effective mobility has also studied down to 8 nm.