2015年 第76回応用物理学会秋季学術講演会

講演情報

シンポジウム(口頭講演)

シンポジウム » Ge-CMOSはどこまで進んでいるのか

[13p-4C-1~9] Ge-CMOSはどこまで進んでいるのか

2015年9月13日(日) 13:15 〜 17:00 4C (432)

座長:右田 真司(産総研),最上 徹(PETRA)

15:15 〜 15:30

[13p-4C-6] Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs

〇(D)Xiao YU1,2, Jian Kang1,2, Rui Zhang1, Wei.-Li Cai1,2, Mitsuru Takenaka1,2, Shinichi Takagi1,2 (1.the Univ. of Tokyo, 2.JST-CREST)

キーワード:GeOI,mobility,Ge

Electrical properties of ultrathin-body GeOI MOSFETs with different Ge/BOX back interfaces have been evaluated in order to study the impact of back interface passivation on the electrical properties. It is found that the influence of back interface quality is more critical than the GeOI crystalline quality in the mobility. The GeOI thickness dependence of the interfacial quality as well as the effective mobility has also studied down to 8 nm.