2:00 PM - 2:15 PM
[13p-4E-4] Ambient-pressure XPS Study of Origin of Positive Charging of Water-adsorbed GeO2/Ge
Keywords:oxide film,charging,water vapor
Charging states of thin GeO2 films on Ge, as well as those of SiO2 on Si, are investigated in the presence of water vapor by ambient-pressure XPS. Obtained Ge3d and Si2p spectra are compared with those taken in ultrahigh vacuum. These spectra probably indicate that, in contrast to SiO2, GeO2 films are positively charged by exposure to water vapor, which is irrelevant to X-ray irradiation.