[13p-4E-1~20] 6.5 Surface Physics, Vacuum

△ [13p-4E-8] Theoretical study of the lateral interchange mechanism of adatom on (111) surfaces of semiconductors

〇Batnyam Enkhtaivan¹, Atsushi Oshiyama¹ (1.Univ. of Tokyo)

Keywords:semiconductor,surface,atom manipulation

Experimentally, it is observed that Pb atom on Ge(111)-c(2x8) interchange with neighboring Ge adatom at room temperature. Also, using AFM tip, lateral interchange manipulation Sb atom on Si(111)-7x7 and Sn atom on Ge(111)-c(2x8) are done. However the mechanism was not clear. We found a interchange mechanism that keeps the bond breaking to the minimum. We also clarified the role of AFM tip on the interchange mechanism.