[13p-4F-1~9] Science and recent trend of liquid silicon

[13p-4F-7] High Stable Liquid Source SiO₂ Passivation on Silicon Surface

〇Chihiro Hagiwara¹, Hiroshi Nagayoshi¹ (1.Tokyo NCT)

Keywords:silicon,passivation,nanowire

In this study, a passivation of liquid source SiO₂ on crystalline silicon surfaces using Perhydropolysilazane (PHPS) has been developed. We obtained excellent passivation properties by introducing the hot steam annealing. The thinner SiO_2, samples showed higher effective lifetime and durability. The deterioration of the minority carrier lifetime in thick SiO₂ samples is caused by an incompletion of the chemical reaction of PHPS during the post annealing process. The films prepared by the PHPS has a lot of positive charges, which can be applied to build Metal Insulator Semiconductor (MIS) solar cells. A combination of the liquid source SiO₂ and silicon nanowires (SiNWs) has investigated. The SiNWs were prepared by chemical etching method using Ag catalyst.