[13p-PB2-1~15] 15.3 III-V-group epitaxial crystals

[13p-PB2-7] Influence of Si Doping on Electrical Properties in GaAsN Thin Films Grown by anAtomic Layer Epitaxy

〇yuki yokoyama¹, Masaru Horikiri¹, Hideaki Hashimoto¹, Tomohiro Haraguchi¹, Toshihiro Yamauchi¹, Hidetoshi Suzuki¹, Koji Maeda¹, Tetsuo Ikari¹, Atsuhiko Fukuyama¹ (1.Univ. of Miyazaki)

Keywords:Atomic Layer Epitaxy,III-V-N semiconductor,Si doping