Growth of InAs-QD using As<sub>2 </sub>molecular beam and study on its application to a 1.05-μm-centered broadband light source

yuma hayashi

Presentation information

Poster presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals

[13p-PB2-1~15] 15.3 III-V-group epitaxial crystals

Sun. Sep 13, 2015 1:30 PM - 3:30 PM PB2 (Shirotori Hall)

1:30 PM - 3:30 PM

[13p-PB2-9] Growth of InAs-QD using As₂molecular beam and study on its application to a 1.05-μm-centered broadband light source

〇yuma hayashi¹, Nobuhiko Ozaki¹, Shunsuke Ohkouchi², Hirotaka Ohsato³, Eiichiro Watanabe³, Naoki Ikeda³, Yoshimasa Sugimoto³ (1.Wakayama Univ., 2.NEC, 3.NIMS)

Keywords:semiconductor,InAs-QD,broadband light source

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Presentation information

[13p-PB2-1~15] 15.3 III-V-group epitaxial crystals

[13p-PB2-9] Growth of InAs-QD using As2 molecular beam and study on its application to a 1.05-μm-centered broadband light source

[13p-PB2-9] Growth of InAs-QD using As₂molecular beam and study on its application to a 1.05-μm-centered broadband light source