Poster presentation

[13p-PB2-1~15] 15.3 III-V-group epitaxial crystals

Sun. Sep 13, 2015 1:30 PM - 3:30 PM PB2 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[13p-PB2-1] First-Principles calculation of the conduction band of InAsN Alloys

〇(M2)Takashi Miyazaki¹, Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1.Saitama Univ.)

1:30 PM - 3:30 PM

[13p-PB2-2] First Principles Study on the Optical Transitions in Nitrogen δ-doped GaAs Superlattices

〇(M1)Hiroki Yoshikawa¹, Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1.Saitama Univ.)

1:30 PM - 3:30 PM

[13p-PB2-3] Temperature dependence of the surface segregation of Er atoms during MBE growth of GaAs

〇riguo jin¹, Kengo Takamiya¹, Shuhei Yagi¹, Yasuto Hijikata¹, Hiroyuki Yaguchi¹ (1.saitama Univ.)

1:30 PM - 3:30 PM

[13p-PB2-4] Influence of low temperature growth on the luminescence from Er doped GaAs

〇(M1)Keitai Iimura¹, Ri Guo Jin¹, Kengo Takamiya¹, Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1.Saitama univ.)

1:30 PM - 3:30 PM

[13p-PB2-5] Luminescence properties of Er δ-doped GaAs with AlAs/GaAs distributed Bragg reflectors

〇(M2)Masaki Suto¹, Ri Guo Jin¹, Kengo Takamiya¹, Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1.Saitama Univ.)

1:30 PM - 3:30 PM

[13p-PB2-6] GaAsN System p⁺ -n⁺ Tunnel Diodes

〇Ryuki Taniguchi¹, Akimi Yamane¹, Satoshi Akiyama¹, Makoto Kuramoto¹, Miki Fujita², Toshiki Makimoto¹ (1.Waseda Univ., 2.NIT, Ichinoseki College)

1:30 PM - 3:30 PM

[13p-PB2-7] Influence of Si Doping on Electrical Properties in GaAsN Thin Films Grown by anAtomic Layer Epitaxy

〇yuki yokoyama¹, Masaru Horikiri¹, Hideaki Hashimoto¹, Tomohiro Haraguchi¹, Toshihiro Yamauchi¹, Hidetoshi Suzuki¹, Koji Maeda¹, Tetsuo Ikari¹, Atsuhiko Fukuyama¹ (1.Univ. of Miyazaki)

1:30 PM - 3:30 PM

[13p-PB2-8] Characterization of InGaSb thin heteroepitaxial layer on AlGaSb buffer layer

〇Shinsuke Hara¹, Issei Watanabe¹, Tatsuya Taketsuru², Daisuke Tsuji², Sachie Fujikawa², Hiroki Fujishiro², Kouichi Akahane¹, Akifumi Kasamatsu¹ (1.NICT, 2.Tokyo Unv. Sci.)

1:30 PM - 3:30 PM

[13p-PB2-9] Growth of InAs-QD using As₂molecular beam and study on its application to a 1.05-μm-centered broadband light source

〇yuma hayashi¹, Nobuhiko Ozaki¹, Shunsuke Ohkouchi², Hirotaka Ohsato³, Eiichiro Watanabe³, Naoki Ikeda³, Yoshimasa Sugimoto³ (1.Wakayama Univ., 2.NEC, 3.NIMS)

1:30 PM - 3:30 PM

[13p-PB2-10] Indium segregation and strain relaxation in the growth of InGaAs/GaAs(001)

〇(M2)Ryota Deki¹, Takuo Sasaki², Masamitu Takahasi^1,2 (1.Univ.Hyogo, 2.JAEA)

1:30 PM - 3:30 PM

[13p-PB2-11] Cut-off angle dependence of InSb/GaSb on GaAs(100) substrates

〇(M1)Hiroki Suzuki¹, Satie Fujikawa¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science)

1:30 PM - 3:30 PM

[13p-PB2-12] Development of high quantum efficiency spin-polarized photocathode using
GaAs/GaAsP strain-compensated superlattice

〇(P)Xiuguang Jin¹, Naoto Yamamoto¹, Atsushi Mano², Masahiro Yamamoto¹, Yoshikazu Takeda² (1.KEK, 2.Aichi SR)

1:30 PM - 3:30 PM

[13p-PB2-13] MBE growth of GaAs/InGaAs QWs on (775)B GaAs substrates with a spherical dimple

〇Asuka Hashimoto¹, Satoshi Shimomura¹ (1.Ehime Univ.)

1:30 PM - 3:30 PM

[13p-PB2-14] Investigation of electrical characteristics of directly-bonded InP/Si substrate interface

〇(M2)Junya Kishikawa¹, Keiichi Matsumoto¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

1:30 PM - 3:30 PM

△ [13p-PB2-15] Crystalline phase transition to wurtzite of AlInP induced by crystal structure transfer

〇yoshihiro hiraya¹, Fumiya Ishizaka¹, Katsuhiro Tomioka^1,2, Takashi Fukui¹ (1.GS-IST and RCIQE, Hokkaido Univ., 2.JST-PRESTO)

Oral presentation

[14a-2W-1~11] 15.3 III-V-group epitaxial crystals

Mon. Sep 14, 2015 9:15 AM - 12:15 PM 2W (234-2(North))

座長:間野高明(物材機構)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

[14a-2W-1] Theoretical Calculation of Electronic States in Compound Alloy Semiconductors: Zincblende III-Vs

〇Ayaka Kishi¹, Masato Oda¹, Yuzo Shinozuka¹ (1.Wakayama Univ.)

9:30 AM - 9:45 AM

▲ [14a-2W-2] Arsenic pressure Dependence GaAsBi/GaAs Growth on (411)B and (100) GaAs Substrates by Molecular Beam Epitaxy

〇(D)Pallavi Patil¹, Satoshi Shimomura¹ (1.Ehime Univ.)

9:45 AM - 10:00 AM

[14a-2W-3] MBE growth of InAs on GaAs (775)B GaAs substrates

〇(M1)Yuki Sato¹, Satoshi Shimomura¹ (1.Ehime Univ.)

10:00 AM - 10:15 AM

[14a-2W-4] Crystal structure of lattice-matched low-temperature-grown In_xGa_1-xAs on InP substrate

〇(M1)Shingo Hirose¹, Kentaro Hirayama¹, Yoriko Tominaga¹, Yutaka Kadoya¹ (1.AdSM, Hiroshima Univ.)

10:15 AM - 10:30 AM

[14a-2W-5] Thermally induced crystallization of low-temperature-grown In_xGa_1-xAs

〇Yoriko Tominaga¹, Yutaka Kadoya¹, Hitoshi Morioka², Osamu Ueda³ (1.AdSM, Hiroshima Univ., 2.Bruker AXS K.K., 3.Kanazawa Inst. Tech.)

10:30 AM - 10:45 AM

[14a-2W-6] Measurement of temperature dependence of conduction electrons energy distribution in a semiconductor by Visible Light Photoemission Spectroscopy

〇(M1)XINYU DONG¹, Fumiaki Ichihashi¹, Takahiko Kawaguchi², Makoto Kuwahara¹, Takahiro Ito¹, Toru Ujihara¹ (1.Nagoya Univ., 2.VBL Nagoya Univ.)

Break （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

[14a-2W-7] MOVPE growth of GaPN pseudo-alloy crystal by N-alternate-supply method using ammonia

〇Masashi Moriyama¹, Keisuke Yamane¹, Hiroto Sekiguchi¹, Hiroshi Okada^2,1, Akihiro Wakahara^1,2 (1.Toyohashi Univ. Tech., 2.EIIRIS)

11:15 AM - 11:30 AM

[14a-2W-8] The effect of the GaSb buffer layer on GaAs grown by MBE on Ge(111) substrates

〇Yasutomo Kajikawa¹, Yibo Son¹, Hisataka Hayase¹, Kenta Ushirogouchi¹, Masahiro Irie¹ (1.Shimane Univ.)

11:30 AM - 11:45 AM

[14a-2W-9] Annealing effect of InGaAsN/GaAsSb quantum wells diodes on InP substrates

〇Yuichi Kawamura¹, Ikuya Shishido¹ (1.Osaka Pref. Univ.)

11:45 AM - 12:00 PM

[14a-2W-10] MOMBE growth of strained InGaAsSb/InGaAsSb MQW structure on InP substrate

〇Manabu Mitsuhara¹, Yoshitaka Ohiso¹ (1.NTT Device Technology Labs)

12:00 PM - 12:15 PM

[14a-2W-11] Fabrication of (110)-oriented GaAs/AlGaAs quantum wells with high MBE growth rate for spin-controlled VCSELs

〇Satoshi Iba¹, Hidekazu Saito¹, Ken Watanabe², Yuzo Ohno², Shinji Yuasa¹ (1.AIST, 2.Univ. of Tsukuba)

Oral presentation

[14p-2W-1~10] 15.3 III-V-group epitaxial crystals

Mon. Sep 14, 2015 1:45 PM - 4:30 PM 2W (234-2(North))

座長:矢口裕之(埼玉大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:00 PM

[14p-2W-1] Temperature dependence of photoluminescence from InAs quantum dot by digital embedding method

〇Kouichi Akahane¹, Toshimasa Umezawa¹, Atsushi Matsumoto¹, Naokatsu Yamamoto¹ (1.NICT)

2:00 PM - 2:15 PM

[14p-2W-2] Fabrication of highly symmetric QD LED on GaAs (111)A

〇Takaaki Mano¹, Takashi Kuroda¹, Neul Ha¹, Takeshi Noda¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (1.NIMS)

2:15 PM - 2:30 PM

[14p-2W-3] PL properties of ultrahigh-density InAs quantum dots on InAsSb/GaAs layers

〇Kazuki Sameshima¹, Koichi Yamaguchi¹ (1.UEC)

2:30 PM - 2:45 PM

[14p-2W-4] Analysis of optical waveguide mode in closely-stacked InAs/GaAs quantum dot semiconductor optical amplifiers

〇Tomoyuki Ohashi¹, Masaya Suwa¹, Tosiyuki kaizu¹, Takashi Kita¹ (1.Kobe Univ.)

2:45 PM - 3:00 PM

[14p-2W-5] MBE growth of InAs/GaAsP quantum-dot multilayer structures

〇Katsuyuki Watanabe^1,2, Takeo Kageyama², Vo Quoc Huy¹, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.IIS, Univ. of Tokyo, 2.NanoQuine, Univ. of Tokyo)

3:00 PM - 3:15 PM

[14p-2W-6] Suppression of Vertical-Alignment in Stacked Quantum Dot Multilayer-Structure

〇Takeo Kageyama¹, Vo Quoc Huy², Katsuyuki Watanabe², Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.Nanoquine, Univ. of Tokyo, 2.IIS, Univ. of Tokyo)

Break （3:15 PM - 3:30 PM）

3:30 PM - 3:45 PM

[14p-2W-7] Effects of Sb Soak on InAs Quantum Dots Grown on (001) and (113)B GaAs Substrates

〇Xiangmeng Lu¹, Naoto Kumagai¹, Takahiro Kitada¹, Toshiro Isu¹ (1.Tokushima Univ.)

3:45 PM - 4:00 PM

[14p-2W-8] Bimodal size distribution of InAs/GaAs Quantum Dots Dependent on GaAs Capping Temperature

〇Toshiyuki Kaizu^1,2, Yusuke Tajiri¹, Takashi Kita¹ (1.Grad. Sch. of Eng., Kobe Univ., 2.CSREA, Kobe Univ.)

4:00 PM - 4:15 PM

[14p-2W-9] Control of surface morphology of capped InAs quantum dots wafer: increase of surface mound height by controlling growth rate

〇Masahiro Kakuda¹, Kazuhiro Kuruma², Jinkwan Kwoen¹, Yasutomo Ota¹, Katsuyuki Watanabe^1,2, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.NanoQuine, 2.IIS, The Univ. of Tokyo)

4:15 PM - 4:30 PM

[14p-2W-10] Growth of InAs/InAlGaAs quantum rods on InP(100) substrate

〇Masato Ohmori¹, Takeshi Noda², Tomoya Kojima¹, Kazuya Sugimura¹, Pavel Vitushinskiy¹, Naotaka Iwata¹, Hiroyuki Sakaki^1,2 (1.Toyota Tech. Inst., 2.NIMS)

Sessions

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals

[13p-PB2-1~15] 15.3 III-V-group epitaxial crystals

△ [13p-PB2-15] Crystalline phase transition to wurtzite of AlInP induced by crystal structure transfer

[14a-2W-1~11] 15.3 III-V-group epitaxial crystals

▲ [14a-2W-2] Arsenic pressure Dependence GaAsBi/GaAs Growth on (411)B and (100) GaAs Substrates by Molecular Beam Epitaxy

[14p-2W-1~10] 15.3 III-V-group epitaxial crystals

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