[13p-PB3-1~2] 15.7 Fundamentals of epitaxy

[13p-PB3-1] Effect of Si doping on vertical growth rate in GaAs microchannel epitaxy

〇Yosuke Mizuno¹, Masafumi Tomita¹, Daisuke Kambayashi¹, Hiroyuki Takakura¹, Muneki Iwakawa¹, Yuko Shiraki¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

Keywords:crystal growth,GaAs,microchannel epitaxy