The 76th JSAP Autumn Meeting, 2015

Presentation information

Poster presentation

Joint Session K » 21.1 Joint Session K

[13p-PB6-1~20] 21.1 Joint Session K

Sun. Sep 13, 2015 4:00 PM - 6:00 PM PB6 (Shirotori Hall)

4:00 PM - 6:00 PM

[13p-PB6-4] Influence of NO addition on the properties of ZnO films grown on a-plane sapphire substrates using high-temperature H2O generated by a catalytic reaction

Yuki Ishidzuka1, Ryoichi Tajima1, Yuki Ohashi1, Yasuhiro Tamayama1, 〇Kanji Yasui1 (1.Nagaoka Univ. Technol.)

Keywords:zinc oxide,catalytic reaction,CVD

We have developed a new CVD method for ZnO film growth using a reaction between an alkylzinc (DMZn) and high-temperature H2O generated by a catalytic reaction on Pt-nanoparticles. The resulting ZnO films grown on a-plane (11-20) sapphire (a-Al2O3) substrates exhibit excellent optical and electronic properties. In this study, we have investigated the influence of the NO gas addition during the film growth on the properties of the resultant ZnO films.