Poster presentation

[13p-PB6-1~20] 21.1 Joint Session K

Sun. Sep 13, 2015 4:00 PM - 6:00 PM PB6 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[13p-PB6-1] Atmospheric-pressure CVD Growth of β-Ga₂O₃ Nanostructures and Their Photoluminescence Properties

〇Tomoaki Terasako¹, Yuya Ohmori², Yuki Kawasaki², Takuya Saeki², Naoki Monden², Akira Miyata², Masakazu Yagi³ (1.Grad. School Sci. Eng., Ehime Univ., 2.Fac. Eng., Ehime Univ., 3.Natl. Inst. Technol., Kagawa Coll.)

4:00 PM - 6:00 PM

[13p-PB6-2] Measurements of Optical Nonlinearities of β-Ga₂O₃ Single Crystals

〇Shingo Saito¹, Masao Ichida², Takeyoshi Onuma^3,1, Kohei Sasaki^4,1, Akito Kuramata⁴, Norihiko Sekine¹, Akifumi Kasamatsu¹, Masataka Higashiwaki¹ (1.NICT, 2.Konan Univ., 3.Kogakuin Univ., 4.Tamura Corp.)

4:00 PM - 6:00 PM

[13p-PB6-3] Surface relaxation structure of α-Ga₂O₃ films grown on α-Al₂O₃ substrates by mist CVD

〇Shun Osaka¹, Daiki Tamba¹, Kazuki Takahashi¹, Masaya Oda^2,3, Kentaro Kaneko², Hiroshi Tabata¹, Osamu Kubo¹, Shizuo Fujita², Mitsuhiro Katayama¹ (1.Osaka Univ.,, 2.Kyoto Univ.,, 3.FLOSFIA INC.)

4:00 PM - 6:00 PM

[13p-PB6-4] Influence of NO addition on the properties of ZnO films grown on a-plane sapphire substrates using high-temperature H₂O generated by a catalytic reaction

Yuki Ishidzuka¹, Ryoichi Tajima¹, Yuki Ohashi¹, Yasuhiro Tamayama¹, 〇Kanji Yasui¹ (1.Nagaoka Univ. Technol.)

4:00 PM - 6:00 PM

[13p-PB6-5] Gas sensing properties of ZnO films

〇Yutaka Adachi¹, Ken Watanabe¹, Noriko Saito¹, Taku Suzuki¹, Isao Sakaguchi¹, Naoki Ohashi¹ (1.NIMS)

4:00 PM - 6:00 PM

[13p-PB6-6] Analysis of Conduction Mechanisms of Non-doped ZnO Films Deposited by RF Sputtering

〇(D)Jiesheng Zhang¹, Yasuhisa Omura¹, Tadashi Saitoh¹ (1.Kansai Univ.)

4:00 PM - 6:00 PM

[13p-PB6-7] Effects of hydrogen incorporation on the electrical properties of ZnO (II)

〇Koji Abe¹, Hiroki Hata¹ (1.Nagoya Institute of Technology)

4:00 PM - 6:00 PM

[13p-PB6-8] Synthesis of ZnO thin film deposited by plasma method

〇Koki Watanabe¹, Kenta Takeuchi¹, Masaki Tanemura¹ (1.Nagoya Inst. of Tech.)

4:00 PM - 6:00 PM

[13p-PB6-9] Air annealing treatment of ZnO layer grown by UHV sputtering (IV)

〇(M2)Kenji Matsuhisa¹, Hiroki Sakuma¹, Tsubasa Hatori¹, Kazuki Watanabe¹, Ai Mizuno¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

4:00 PM - 6:00 PM

[13p-PB6-10] Fabrications of ZnCdO/ZnO Mulilayers by Sol-Gel Dip Method

〇Takashi Yasuda¹, Shuto Sasaki¹, Masaru Seino¹ (1.Ishinomaki Senshu Univ.)

4:00 PM - 6:00 PM

[13p-PB6-11] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition

〇(M2)shin nakajima¹, ken nakashima¹, yoshinori oyaizu¹, tomoya nakayama¹, tsutomu muranaka¹, yoichi nabetani¹, takashi matsumoto¹ (1.Univ. of Yanamashi)

4:00 PM - 6:00 PM

[13p-PB6-12] Annealing effect of ambient and vacuum atmosphere on Nb:TiO₂/Ga:ZnO bilayer

〇rei sugiura¹, shuhei funaki¹, yasuji yamada¹ (1.Shimane Univ.)

4:00 PM - 6:00 PM

[13p-PB6-13] Fabrication of transparent conductive Nb:TiO₂ films with sputtering and air annealing

〇Shoichiro Nakao^1,2, Yasushi Hirose^1,2,3, Tetsuya Hasegawa^1,2,3 (1.KAST, 2.CREST, 3.Univ. of Tokyo)

4:00 PM - 6:00 PM

△ [13p-PB6-14] Analysis of Interfacial Property in Oxide Thin Film Transistors
with Ionic-liquid Gate Dielectric

〇Hiromi Okada¹, Mami Fujii¹, Yasuaki Ishikawa¹, Kazumoto Miwa², Shimpei Ono², Yukiharu Uraoka¹ (1.NAIST, 2.CRIEPI)

4:00 PM - 6:00 PM

[13p-PB6-15] Quantum confined Stark effect in non-polar ZnO/ZnMgO quantum wells

〇Masaya Yamamoto¹, Tatsuya Motoyama¹, Atsushi Yamamoto¹, Shohei Iwagashita¹, Tomoki Abe¹, Hirohumi Kasada¹, Koshi Ando¹, Kunio Ichino¹ (1.Tottori Univ.)

4:00 PM - 6:00 PM

[13p-PB6-16] Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

〇Shinya Aikawa^1,2, Nobuhiko Mitoma¹, Takio Kizu¹, Toshihide Nabatame¹, Kazuhito Tsukagoshi¹ (1.NIMS, 2.Kogakuin Univ.)

4:00 PM - 6:00 PM

[13p-PB6-17] Effect of Si doping in β-Ga₂O₃ by time-resolved spectroscopy

Nana Kimura¹, 〇Hisaya Oda¹, Dai Yasukawa¹, Hirofumi Wakai¹, Akio Yamanaka¹ (1.Chitose Inst. Sci. & Tech.)

4:00 PM - 6:00 PM

[13p-PB6-18] Electroluminescence from n-ZnO/ Si3N4/NiO/p-Si heterojunctions formed by electric field applied sol-gel method

〇Tomoya Ohnishi¹, Kazunori Abe², Takashi Aoyama¹, Hiroyuki Yamaguti¹, Takao Komiyama¹, Yasunori Chonan¹ (1.Akita Prefectural Univ., 2.Akita Univ.)

4:00 PM - 6:00 PM

△ [13p-PB6-19] PL properties of nitrogen doped ZnO nanoparticles by using RF thermal plasma

〇Yuto Hiragino¹, Hirohumi Seiyama¹, Kosuke Abe¹, Jie Lin¹, Toshiyuki Yoshida¹, Yasuhisa Fujita¹ (1.Shimane Univ.)

4:00 PM - 6:00 PM

△ [13p-PB6-20] Electroluminescence from ZnMgO:N/ZnO single heterojunction fabricated by MOCVD

〇shogo yanase¹, Hirokazu Nishikori¹, Yasuhisa Fujita¹ (1.Shimane Univ.)

Oral presentation

[14a-1B-1~11] 21.1 Joint Session K

Mon. Sep 14, 2015 9:00 AM - 12:00 PM 1B (133+134)

座長:牧野久雄(高知工科大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[14a-1B-1] Air annealing treatment of ZnO layer grown by UHV sputtering(Ⅱ)

〇(M1)kazuki watanabe¹, matsuhisa kenji¹, sakuma daiki¹, hatori tsubasa¹, sinoda hiroyuki¹, mutukura nobuki¹ (1.Tokyo Denki Univ.)

9:15 AM - 9:30 AM

[14a-1B-2] Air annealing treatment of ZnO layer grown by UHV sputtering(Ⅲ)

〇(M1)TSUBASA HATORI¹, HIROKI SAKUMA¹, KENJI MATSUHISA¹, KAZUKI WATANABE¹, AI MIZUNO¹, HIROYUKI SHINODA¹, NOBUKI MUTSUKURA¹ (1.Tokyo Denki Univ.)

9:30 AM - 9:45 AM

△ [14a-1B-3] Electric properties of ZnO graphoepitaxial films

〇Tetsuya Kudoh¹, Takayoshi Oshima¹, Kazuki Ohashi¹, Kohei Yoshimatsu¹, Akira Ohtomo^1,2 (1.Tokyo Tech., 2.MCES)

9:45 AM - 10:00 AM

△ [14a-1B-4] Suppression of unstable nucleation in vanadium-doped ZnO thin films

〇Hiroshi Chiba¹, Akihiro Watanabe¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ.)

10:00 AM - 10:15 AM

[14a-1B-5] Formation of multi-phase structure in ZnO thin films heavily doped with vanadium

〇Tomoyuki Kawashima¹, Akihiro Watanabe¹, Katsuyoshi Washio¹ (1.Tohoku Univ.)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[14a-1B-6] Evaluation of S-doped ZnO thin films formed by mist-CVD

〇YOSHIHITO SATO¹, Kensuke Minami¹, Takuya Ishihara¹, Yoshihiro Naka^1,3, Shoji Nagaoka^2,3, Koji Sue¹, Yusui Nakamura^1,3 (1.Kumamoto Univ, 2.Kumamoto Industrial Research Institute, 3.Phoenics)

10:45 AM - 11:00 AM

[14a-1B-7] Nitrogen Doping into ZnO films using non-equilibrium atmospheric pressure plasma

〇Hironori Iwasaki¹, Yukinori Nose¹, Takeshi Yoshimura¹, Atushi Ashida¹, Tsuyoshi Uehara², Norifumi Fujimura¹ (1.Osaka Prefecture Univ., 2.Sekisui Chemical Co., LTD.)

11:00 AM - 11:15 AM

[14a-1B-8] The excitation processes in atmospheric pressure N₂ plasma with the addition of small amount of O₂ and the formation of highly resistive ZnO films

〇(D)Yukinori Nose¹, Takuya Kiguchi¹, Takada Kenshi¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Tsuyoshi Uehara², Norifumi Fujimura¹ (1.Osaka Prefecture Univ., 2.Sekisui Chemical Co., LTD.)

11:15 AM - 11:30 AM

△ [14a-1B-9] Dependence of ZnO nanowires’ catalyst-free growth using UV-laser processing on the plane direction of sapphire substrates

〇(DC)Tetsuya Shimogaki¹, Masahiro Takahashi¹, Mitsuhiro Higashihata¹, Daisuke Nakamura¹, Hiroshi Ikenoue¹, Yoshiki Nakata², Tatsuo Okada¹ (1.Kyushu Univ., 2.Osaka Univ.)

11:30 AM - 11:45 AM

[14a-1B-10] Influence of Heat-treatment Temperature on NiO Growth on MgO by Sol−Gel Method

〇Yoshihiro Kokubun¹, Masato Koyanagi¹, Shinji Nakagomi¹ (1.Ishinomaki Senshu Univ.)

11:45 AM - 12:00 PM

[14a-1B-11] AP-MOCVD deposition of CuO thin films

〇Kazuki Fujiwara¹, Mizuki Teramura¹, Kentaro Taguch¹, Kai Taniguch¹, Hiroyasu Ishikawa^1,2 (1.Shibaura Inst., 2.SIT Center for Green Inovation)

Oral presentation

[15a-1B-1~10] 21.1 Joint Session K

Tue. Sep 15, 2015 9:00 AM - 11:45 AM 1B (133+134)

座長:大島孝仁(東工大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[15a-1B-1] [JSAP Young Scientist Award Speech] Physics on development of open-air atmospheric pressure thin film fabrication technique using mist droplets: Control of precursor flow

〇Toshiyuki Kawaharamura¹ (1.Kochi University of Technology)

9:15 AM - 9:30 AM

△ [15a-1B-2] Evaluation of Crystal Structures of α-Ga₂O₃ Thin Films on α-(Al_xGa_1-x)₂O₃ Buffer Layers

〇Riena Jinno¹, Yoshito Ito¹, Kentaro Kaneko¹, Shizuo Fujita¹ (1.Kyoto Univ.)

9:30 AM - 9:45 AM

△ [15a-1B-3] Electrical Properties of Sn-Doped alpha-Ga₂O₃ Films Grown on Annealed Buffer Layer

〇Kazuaki Akaiwa¹, Kentaro Kaneko¹, Shizuo Fujita¹ (1.Kyoto Univ.)

9:45 AM - 10:00 AM

[15a-1B-4] Dependence of Surface Morphology on VI/III Ratio of Ozone-MBE Grown β-Ga₂O₃ Homoepitaxial Films

〇Kohei Sasaki¹, Akito Kuramata¹, Shigenobu Yamakoshi¹ (1.Tamura Corp.)

10:00 AM - 10:15 AM

△ [15a-1B-5] Room temperature fabrication of β-Ga₂O₃ epitaxial thin films on NiO-buffered α-Al₂O₃ (0001) by KrF excimer laser annealing

〇(DC)Daishi Shiojiri¹, Daiji Fukuda¹, Hiroki Uchida¹, Shiori Takano¹, Nobuo Tsuchimine², Koji Koyama³, Satoru Kaneko^4,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Inst. of Tech., 2.TOSHIMA Manu. Co., Ltd., 3.Namiki Precision Jewel Co., Ltd., 4.Kanagawa Ind. Tech. Center)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

△ [15a-1B-6] Observation of Etch Pits of (0\overline{1}0) β-Ga₂O₃ Single Crystals

〇Takumi Uematsu¹, Satoshi Masuya¹, Tomoya Moribayashi¹, Kenji Hanada¹, Kimiyoshi Koshi², Kouhei Sasaki², Akito Kuramata², Makoto Kasu¹ (1.Saga Univ., 2.Tamura Corp.)

10:45 AM - 11:00 AM

[15a-1B-7] Evaluation of Crystal Defect in β-Ga₂O₃ Crystal (3)

〇Tetsuya Nagai¹, Kengo Noami¹, Masayuki Sasaki¹, Katsuhiko Nakai¹, Toshiro Futagi¹ (1.NSST)

11:00 AM - 11:15 AM

[15a-1B-8] Comparative Study on Thermal Stability of Group-III Oxides

〇Rie Togashi¹, Kazushiro Nomura¹, Chihiro Eguchi¹, Yumi Kisanuki¹, Ken Goto^1,2, Quang Tu Thieu^1,3, Hisashi Murakami¹, Yoshinao Kumagai¹, Akito Kuramata², Shigenobu Yamakoshi², Bo Monemar^3,4, Akinori Koukitu¹ (1.Tokyo Univ. of Agri. & Tech., 2.Tamura Corp., 3.TUAT GIRO, 4.Linkoping Univ.)

11:15 AM - 11:30 AM

[15a-1B-9] Low temperature growth of β -Ga₂O₃films by atmospheric pressure plasma enhanced CVD

〇Takuya Kiguchi¹, Yukinori Nose¹, Kenshi Takada¹, Tsuyoshi Uehara², Norifumi Fujimura¹ (1.Osaka Prefecture Univ., 2.Sekisui Chemical Co., LTD.)

11:30 AM - 11:45 AM

[15a-1B-10] Optical Anisotropy in (010) Plane of β-Ga₂O₃ Crystals

〇Takeyoshi Onuma^1,2, Shingo Saito², Kohei Sasaki^3,2, Tatekazu Masui³, Tomohiro Yamaguchi¹, Tohru Honda¹, Masataka Higashiwaki² (1.Kogakuin Univ., 2.NICT, 3.Tamura Corp.)

Oral presentation

[15p-1B-1~18] 21.1 Joint Session K

Tue. Sep 15, 2015 1:15 PM - 6:00 PM 1B (133+134)

座長:浦岡行治(奈良先端大),神谷利夫(東工大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

△ [15p-1B-1] Strong Fermi-level pinning at metal/β-Ga₂O₃ (-201) interfaces

〇Ryo Wakabayashi¹, Takayoshi Oshima¹, Mai Hattori¹, Kohei Sasaki², Takekazu Masui², Akito Kuramata², Shigenobu Yamakoshi², Kohei Yoshimatsu¹, Akira Ohtomo^1,3 (1.Tokyo Institute of Technology Univ., 2.Tamura Corporation, 3.MCES)

1:30 PM - 1:45 PM

△ [15p-1B-2] Epitaxial structure and capacitance-voltage characteristics of γ-Al₂O₃ films grown on β-Ga₂O₃ (010) substrate

〇Mai Hattori¹, Takayoshi Oshima¹, Ryo Wakabayashi¹, Kohei Sasaki², Takekazu Masui², Akito Kuramata², Shigenobu Yamakoshi², Kohei Yoshimatsu¹, Akira Ohtomo^1,3 (1.Tokyo Tech., 2.Tamura Corporation, 3.MCES)

1:45 PM - 2:00 PM

△ [15p-1B-3] Fabrication of Sn-doped β-Ga₂O₃ (/overline{2}01) single crystal Schottky barrier diodes

〇(M1)Yuta Koga¹, Kazuya Harada¹, Kenji Hanada¹, Toshiyuki Oishi¹, Makoto Kasu¹ (1.Saga Univ.)

2:00 PM - 2:15 PM

[15p-1B-4] Schottky Diode Based on Hetero Structure between GaN and β-Ga₂O₃

〇Shinji Nakagomi¹, Yusuke Takahashi¹, Taka-aki Sato¹, Yoshihiro Kokubun¹ (1.Ishinomaki Senshu Univ.)

2:15 PM - 2:30 PM

[15p-1B-5] Dependency of sputtering conditions in IGZO film

〇mitsuru ueno¹, Makoto Arai¹, Junya Kiyota¹, Kazuya Saito¹ (1.ULVAC,Inc.)

2:30 PM - 2:45 PM

[15p-1B-6] Important factors to determine optimum growth condition for amorphous oxide semiconductor thin-film transistors

〇Toshio Kamiya^1,2, Keisuke Ide¹, Hideya Kumomi², Hideo Hosono^1,2 (1.MSL Tokyo Tech, 2.MCES Tokyo Tech)

2:45 PM - 3:00 PM

△ [15p-1B-7] Relationship between excess oxygen and instability in amorphous In-Ga-Zn-O

〇Keisuke Ide¹, Hidenori Hiramatsu¹, Hideya Kumomi², Hideo Hosono^1,2, Toshio Kamiya^1,2 (1.MSL, Tkyo Tech., 2.MCES, Tokyo Tech.)

3:00 PM - 3:15 PM

[15p-1B-8] Effects of impurity hydrogen on subgap defects in amorphous In-Ga-Zn-O

Haochun Tang¹, 〇Toshio Kamiya^1,2, Kyohei Ishikawa¹, Keisuke Ide¹, Hidenori Hiramatsu¹, Shigenori Ueda³, Naoki Ohashi^2,3, Hideya Kumomi², Hideo Hosono^1,2 (1.MSL Tokyo Tech, 2.MCES Tokyo Tech, 3.NIMS)

3:15 PM - 3:30 PM

[15p-1B-9] Microscopically-Patterned Electrochemical Doping to TiO₂ Thin Films

〇Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

Break （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

[15p-1B-10] [Young Scientist Presentation Award Speech] Solution-Processed Metal Oxide Thin-Film Transistor with Printed-Silver Electrode

〇Satoshi Urakawa^1,2, Yasuaki Ishikawa¹, Yukihiro Osada¹, Mami Fujii¹, Yukiharu Uraoka¹ (1.NAIST, 2.JSPS Research Fellow)

4:00 PM - 4:15 PM

△ [15p-1B-11] XPS analysis of carrier generation mechanism in He-plasma-treated InGaZnO.
Effects of substrate bias during He-plasma treatment of IGZO.

〇(M1)Yusaku Magari¹, Hisao Makino^1,2, Dapeng Wang^1,2, Mamoru Furuta^1,2 (1.Kochi Univ. of Tech., 2.Research Inst.)

4:15 PM - 4:30 PM

△ [15p-1B-12] A study of oxide TFT’s degradation phenomena due to self-heating under pulse voltage

〇Kahori Kise¹, Mami Fujii¹, Haruka Yamazaki¹, Satoshi Urakawa¹, Shigekazu Tomai², Koki Yano², Dapeng Wang³, Mamoru Furuta³, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST, 2.Idemitsu Kosan Co., Ltd., 3.Kochi Univ. of Technology)

4:30 PM - 4:45 PM

△ [15p-1B-13] Improvement of NBTI and PBTI characteristics of C-doped In-Si-O TFT

〇(M2)Kazunori Kurishima^1,2, Toshihide Nabatame², Nobuhiko Mitoma², Takio Kizu², Kazuhito Tsukagoshi², Tomomi Sawada², Akihiko Ohi², Ippei Yamamoto^3,2, Tomoji Ohishi³, Toyohiro Chikyow², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS, 3.Shibaura Inst. Tech)

4:45 PM - 5:00 PM

[15p-1B-14] Study on Preparation of an IGZO Precursor Solution with Coatability and the Annealing Process

〇SHINTARO OGURA¹, Hea-jeong Cheong¹, Sei Uemura¹, Hirobumi Ushijima¹, Nobuko Fukuda¹ (1.AIST)

5:00 PM - 5:15 PM

[15p-1B-15] Solution Processed Hybrid IGZO-organic Complementary Thin Film Transistors

〇(P)Heajeong Cheong¹, Kazunori Kuribara¹, Shintaro Ogura¹, Manabu Yoshida¹, Hirobumi Ushijima¹, Nobuko Fukuda¹, Sei Uemura¹ (1.AIST)

5:15 PM - 5:30 PM

[15p-1B-16] Double-layer Amorphous InSiO Thin-film Transistors

〇(PC)Takio Kizu¹, Shinya Aikawa^1,2, Toshihide Nabatame¹, Kazuhito Tsukagoshi¹ (1.NIMS, 2.Kogakuin Univ.)

5:30 PM - 5:45 PM

[15p-1B-17] Heating properties of a-InGaZnO TFTs with micro heaters

〇Shinnosuke Iwamatsu¹, Yutaka Abe¹, Toru Yahagi¹, Mutsuto katoh¹ (1.Yamagata res. inst. tech.)

5:45 PM - 6:00 PM

△ [15p-1B-18] Top-Gate Self-Aligned IGZO TFT Using Printed Organic Gate Insulator

〇(D)Tatsuya Toda¹, Yusaku Magari¹, Mamoru Furuta¹ (1.Kochi Univ. of Tech.)

Oral presentation

[16a-1B-1~12] 21.1 Joint Session K

Wed. Sep 16, 2015 9:00 AM - 12:15 PM 1B (133+134)

座長:川原村敏幸(高知工科大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[16a-1B-1] Change of surface properties of Ga-doped ZnO thin films by thermal annealing

〇Hisao Makino^1,2, Lukman Nulhakim², Nomoto Jun-ichi¹, Yamamoto Tetsuya¹ (1.Res. Inst. of KUT, 2.Kochi Univ. of Tech.)

9:15 AM - 9:30 AM

[16a-1B-2] Carrier transport of polycrystalline Ga-doped ZnO films prepared by reactive plasma deposition with dc arc discharge: oxygen gas flow rate and discharge current

〇Junichi Nomoto¹, Hisao Makino^1,2, Hisashi Kitami³, Toshiyuki Sakemi³, Tetsuya Yamamoto¹ (1.Research Inst., Kochi Univ. Tech., 2.Kochi Univ. Tech., 3.Sumitomo Heavy Ind, Ltd.)

9:30 AM - 9:45 AM

△ [16a-1B-3] Incident energy and ionization rates of flying particles during the growth of Ga-doped ZnO films by the reactive plasma deposition with dc arc discharge

〇Hisashi Kitami¹, Toshiyuki Sakemi¹, Junichi Nomoto², Hisao Makino^2,3, Yasushi Aoki¹, Takanori Kato¹, Tetsuya Yamamoto² (1.SHI, 2.Research Inst., Kochi Univ. Tech., 3.Kochi Univ. Tech.)

9:45 AM - 10:00 AM

[16a-1B-4] Influence of grain boundary on carrier transport in polycrystalline transparent conducting Al-doped ZnO thin films (2)

〇ryousuke uozaki¹, Toshihiro Miyata¹, Tadastugu Minami¹ (1.OEDS R&D Center, K I T)

10:00 AM - 10:15 AM

[16a-1B-5] Improving of Electrical Performance of SiO₂/ZnO Layered film by Thermal Annealing

〇Yasuji Yamada¹, Shuhei Funaki¹, Sota Inoue¹, Hiroki Kikuchi¹ (1.Shimane Univ.)

10:15 AM - 10:30 AM

△ [16a-1B-6] Physical property control of zinc oxide thin film by hydrogen ion beam irradiation at low temperature

〇Ryo Nakayama¹, Mitsuhiko Maesato¹, Takashi Nagaoka², Makoto Arita², HIroshi Kitagawa^1,3 (1.Kyoto Univ., 2.Kyushu Univ., 3.JST-CREST)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[16a-1B-7] Transparent conductive properties of ZnO films on sapphire C-plane substrates

〇Housei Akazawa¹ (1.NTT DIC)

11:00 AM - 11:15 AM

△ [16a-1B-8] Orientation dependence of conductivity in anatase Ti_1-xNb_xO₂ thin films.

〇(M2)yuuki yamaguchi¹, Shouichirou Nakao^2,3, Ryuuichirou Ino¹, Masunori Kawamura¹, Tetsuya Hasegawa^2,3, Naoomi Yamada¹ (1.Chubu Univ., 2.KAST, 3.Tokyo Univ.)

11:15 AM - 11:30 AM

△ [16a-1B-9] Preparation and evaluation of transparent p-type semiconducting γ-CuI thin films.

〇(M1)ryuichiro ino¹, Kohei Maruya¹, Yuuki Yamaguchi¹, Masunori Kawamura¹, Yoshihiko Ninomiya¹, Naoomi Yamada¹ (1.Chubu Univ.)

11:30 AM - 11:45 AM

[16a-1B-10] Dye-sensitized solar cell with ZrO₂ nano-particle light scattering layer

Rieko Ono¹, Takeshi Endo¹, Rena Otsuka¹, 〇Masayuki Okuya^1,2 (1.Grad. School Eng., Shizuoka Univ., 2.Res. Inst. Green Sci. Tech., Shizuoka Univ.)

11:45 AM - 12:00 PM

[16a-1B-11] Reduction of the interface resistance in dye-sensitized solar cell with TNO transparent conductive film

Takeshi Endo¹, Rieko Ono¹, 〇Masayuki Okuya^1,2, Ryo Iwaki¹, Shuichiro Takemura¹, Shoichiro Nakao³, Sohei Okazaki³, Enju Sakai³, Naoomi Yamada³, Taro Hitosugi⁴, Tetsuya Hasegawa⁵ (1.Grad. School Eng., Shizuoka Univ., 2.Res. Inst. Green Sch. Tech., Shizuoka Univ., 3.KAST, 4.Tohoku Univ., 5.Univ. Tokyo)

12:00 PM - 12:15 PM

[16a-1B-12] Plasmonic technology in wide-gap oxide semiconductors:
Fabricartions of reflection-type thermal-shielding sheets with visible/electromagnetic transmissions

〇Hiroaki Matsui¹, Shinya Furuta², Takayuki Hasebe³, Noriyuki Hasuike⁴, Hitoshi Tabata¹ (1.The Univ. of Tokyo, 2.Tomoe Works, 3.Custum Central Lab., 4.Kyoto Inst. of Tech.)

Sessions

Joint Session K » 21.1 Joint Session K

[13p-PB6-1~20] 21.1 Joint Session K

△ [13p-PB6-14] Analysis of Interfacial Property in Oxide Thin Film Transistorswith Ionic-liquid Gate Dielectric

△ [13p-PB6-19] PL properties of nitrogen doped ZnO nanoparticles by using RF thermal plasma

△ [13p-PB6-20] Electroluminescence from ZnMgO:N/ZnO single heterojunction fabricated by MOCVD

[14a-1B-1~11] 21.1 Joint Session K

△ [14a-1B-3] Electric properties of ZnO graphoepitaxial films

△ [14a-1B-4] Suppression of unstable nucleation in vanadium-doped ZnO thin films

△ [14a-1B-9] Dependence of ZnO nanowires’ catalyst-free growth using UV-laser processing on the plane direction of sapphire substrates

[15a-1B-1~10] 21.1 Joint Session K

△ [15a-1B-2] Evaluation of Crystal Structures of α-Ga2O3 Thin Films on α-(AlxGa1-x)2O3 Buffer Layers

△ [15a-1B-3] Electrical Properties of Sn-Doped alpha-Ga2O3 Films Grown on Annealed Buffer Layer

△ [15a-1B-5] Room temperature fabrication of β-Ga2O3 epitaxial thin films on NiO-buffered α-Al2O3 (0001) by KrF excimer laser annealing

△ [15a-1B-6] Observation of Etch Pits of (0\overline{1}0) β-Ga2O3 Single Crystals

[15p-1B-1~18] 21.1 Joint Session K

△ [15p-1B-1] Strong Fermi-level pinning at metal/β-Ga2O3 (-201) interfaces

△ [15p-1B-2] Epitaxial structure and capacitance-voltage characteristics of γ-Al2O3 films grown on β-Ga2O3 (010) substrate

△ [15p-1B-3] Fabrication of Sn-doped β-Ga2O3 (/overline{2}01) single crystal Schottky barrier diodes

△ [15p-1B-7] Relationship between excess oxygen and instability in amorphous In-Ga-Zn-O

△ [15p-1B-11] XPS analysis of carrier generation mechanism in He-plasma-treated InGaZnO.Effects of substrate bias during He-plasma treatment of IGZO.

△ [15p-1B-12] A study of oxide TFT’s degradation phenomena due to self-heating under pulse voltage

△ [15p-1B-13] Improvement of NBTI and PBTI characteristics of C-doped In-Si-O TFT

△ [15p-1B-18] Top-Gate Self-Aligned IGZO TFT Using Printed Organic Gate Insulator

[16a-1B-1~12] 21.1 Joint Session K

△ [16a-1B-3] Incident energy and ionization rates of flying particles during the growth of Ga-doped ZnO films by the reactive plasma deposition with dc arc discharge

△ [16a-1B-6] Physical property control of zinc oxide thin film by hydrogen ion beam irradiation at low temperature

△ [16a-1B-8] Orientation dependence of conductivity in anatase Ti1-xNbxO2 thin films.

△ [16a-1B-9] Preparation and evaluation of transparent p-type semiconducting γ-CuI thin films.

Authentication

△ [13p-PB6-14] Analysis of Interfacial Property in Oxide Thin Film Transistors
with Ionic-liquid Gate Dielectric

△ [15a-1B-2] Evaluation of Crystal Structures of α-Ga₂O₃ Thin Films on α-(Al_xGa_1-x)₂O₃ Buffer Layers

△ [15a-1B-3] Electrical Properties of Sn-Doped alpha-Ga₂O₃ Films Grown on Annealed Buffer Layer

△ [15a-1B-5] Room temperature fabrication of β-Ga₂O₃ epitaxial thin films on NiO-buffered α-Al₂O₃ (0001) by KrF excimer laser annealing

△ [15a-1B-6] Observation of Etch Pits of (0\overline{1}0) β-Ga₂O₃ Single Crystals

△ [15p-1B-1] Strong Fermi-level pinning at metal/β-Ga₂O₃ (-201) interfaces

△ [15p-1B-2] Epitaxial structure and capacitance-voltage characteristics of γ-Al₂O₃ films grown on β-Ga₂O₃ (010) substrate

△ [15p-1B-3] Fabrication of Sn-doped β-Ga₂O₃ (/overline{2}01) single crystal Schottky barrier diodes

△ [15p-1B-11] XPS analysis of carrier generation mechanism in He-plasma-treated InGaZnO.
Effects of substrate bias during He-plasma treatment of IGZO.

△ [16a-1B-8] Orientation dependence of conductivity in anatase Ti_1-xNb_xO₂ thin films.