The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

Joint Session K » 21.1 Joint Session K

[15p-1B-1~18] 21.1 Joint Session K

Tue. Sep 15, 2015 1:15 PM - 6:00 PM 1B (133+134)

座長:浦岡 行治(奈良先端大),神谷 利夫(東工大)

2:30 PM - 2:45 PM

[15p-1B-6] Important factors to determine optimum growth condition for amorphous oxide semiconductor thin-film transistors

〇Toshio Kamiya1,2, Keisuke Ide1, Hideya Kumomi2, Hideo Hosono1,2 (1.MSL Tokyo Tech, 2.MCES Tokyo Tech)

Keywords:amoprhous oxide semiconductor,thin-film transistor,optimum growth condition

The optimum growth condition for amorphous oxide semiconductor thin-film transistor will be discussed.