[15p-1B-1~18] 21.1 Joint Session K

△ [15p-1B-11] XPS analysis of carrier generation mechanism in He-plasma-treated InGaZnO.
Effects of substrate bias during He-plasma treatment of IGZO.

〇(M1)Yusaku Magari¹, Hisao Makino^1,2, Dapeng Wang^1,2, Mamoru Furuta^1,2 (1.Kochi Univ. of Tech., 2.Research Inst.)

Keywords:Oxide semiconductor,Plasma treatment