[14a-1B-1~11] 21.1 Joint Session K

△ [14a-1B-9] Dependence of ZnO nanowires’ catalyst-free growth using UV-laser processing on the plane direction of sapphire substrates

〇(DC)Tetsuya Shimogaki¹, Masahiro Takahashi¹, Mitsuhiro Higashihata¹, Daisuke Nakamura¹, Hiroshi Ikenoue¹, Yoshiki Nakata², Tatsuo Okada¹ (1.Kyushu Univ., 2.Osaka Univ.)

Keywords:ZnO nanowire,Pulsed laser deposition,Laser patterning

We have been investigating fabrication of ZnO nanocrystals using ultraviolet laser processing without catalyst or etching processes. In this conference, we would like to report about investigation of dependence of ZnO nanowires’ growth density and growth model on the plane direction of sapphire substrates. In the experiment, we used a-plane, c-plane, and m-plane sapphire substrates. Crystalline orientations of ZnO buffer layer deposited on them were investigated by the x-ray diffraction measurement and electron back scatter diffraction measurement. Subsequently, ZnO nanowires were synthesized on the ZnO buffer layers. Dependence of nanowires’ density on the orientation of sapphire substrates will be discussed.